Triode/MOS tube/transistor/module

PNP hfe:200-350

PNP

PNP, Vceo=-50V, Ic=-2A, hfe=120~240

NPN, Vceo=80V, Ic=1A, hfe=63~250

PNP, Vceo=-50V, Ic=-2A, hfe=120~240

PNP transistor, 60V/3A, can replace 2SB512, TIP32A

SOT-323 (SC70-3) small encapsulation, PNP output

NPN, Vceo=80V, Ic=1A, hfe=180~390

Configuration Single Type N-Ch VDS(V) 20 VGS(V) 12 ID(A)Max. 3 VGS(th)(v) 0.85 RDS(ON)(m?)@4.22V 60 Qg(nC)@4.5V 5.4 QgS(nC) 0.44 Qgd(nC) 1 Ciss(pF) 320 Coss(pF) 35 Crss(pF) 22

This family of digital transistors is suitable for replacing a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce both system cost and board space.