Power chip

10A, 2.2V to 5.5V Input, Ceramic Cap Version, Non-Isolated, Wide Output, Adjustable Power Module with TurboTrans Technology 11-Surface Mount Module -40 to 85

The FAD7191 is a monolithic high- and low-side gate drive IC that can drive MOSFETs and IGBTs operating up to +600V. It has a buffered output stage with all NMOS transistors designed for high pulse drive capability and minimal cross-conduction. ON Semiconductor's high-voltage process and common-mode interference suppression technology provide stable operation of the high-side driver under high dv/dt interference conditions. Advanced level shifting circuitry provides high side gate driver operation up to VS=-9.8 V (typ) for VBS=15 V. A UVLO circuit prevents faulty operation when VDD and VBS are below specified threshold voltages. The high current and low output voltage drop characteristics make this device suitable for controlling direct injection drives, as well as many automotive DC-DC converters and motor control applications. The FAD7191 features a 14-SOP encapsulation with separate signal and power grounds for higher noise immunity in high power applications, adequate spacing and creepage distances necessary in high voltage applications, and enablement for shutdown redundancy purposes pin.

4A, 120V Half Bridge Gate Driver with 5V UVLO and Negative Voltage Handling 10-WSON -40 to 140

Automotive 5.7kVrms ±10A Single Channel Isolated Gate Driver with Level 2 Shutdown for IGBT/SiC FET 16-SOIC -40 to 125