Power chip

24V high withstand voltage type 4056, 1A single-cell lithium battery charging, no need to add additional TVS devices for anti-surge in 5V USB applications, provide DFN2*2 ultra-small encapsulation, 4.2V battery, battery leakage 1uA, for the battery terminal Equipped with perfect protection: overheating, short circuit, thermal regulation, battery overcharge and over discharge.

Linear regulator chip 3.3V LDO, 1A

INA214 26V, Bidirectional, Zero Drift, High Accuracy, Low Side/High Side, Voltage Output Current Shunt Monitor

ADJ

Isolated power module: input range DC9~18V/2:1, output 5V, 6W, isolation voltage greater than 1.5kV, 1x1 inch international standard, industrial grade, TD6 series module power efficiency up to 83%, compatible with VRB1205YMD-6WR3, DIP: 25.4 x25.4x10mm

The NCP81075 is a high-performance dual-MOSFET (high-side and low-side) gate drive integrated circuit suitable for driving high-speed, high-voltage MOSFETs operating at voltages up to 180 V. The NCP81075 integrates a driver IC and a bootstrap diode with a drive capability up to 4A. High-side and low-side drivers are independently controlled with matched 3.5ns typical propagation delay. This driver is suitable for high voltage buck applications, isolated power supplies, 2-switch and active clamp forward converters. The device can also be used in solar optimizer and solar inverter applications. The part is available in SO8, 8-pin DFN and 10-pin DFN encapsulation and is fully specified from -40C to 140C.

PIN can only be used as EN function, peak 6.5A synchronous boost IC, and other mobile power supplies are commonly used.

TPS61028 Adjustable 800mA Switching, 96% Efficient Boost Converter with LDO Buck Mode Using QFN-10 Encapsulation

Low Dropout (LDO) 3.3V Fixed Voltage Regulator 3-TO-252 0 to 125