Diode/Bridge Rectifier

Diode configuration: stand-alone DC reverse withstand voltage (Vr): 600V Average rectified current (Io): 2A Forward voltage drop (Vf): 1.1V@2A

Diode Configuration: Standalone Power: 500mW DC Reverse Withstand Voltage (Vr): 85V Average Rectified Current (Io): 250mA Forward Voltage Drop (Vf): 715mV@1mA Reverse Current (Ir): 30nA@25V Reverse Recovery Time (trr): 4ns Operating temperature: +150℃@(Tj)

The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. Advanced geometries employ oxide passivation and epitaxial structures with metal-covered contacts. The Schottky diode is suitable for low-voltage, high-frequency rectification, or applications employing freewheeling and polarity protection diodes, where compact size and weight are critical to the system.

This common-cathode Schottky diode is suitable for high-speed switching applications, circuit protection, and voltage clamping. Very low forward voltage reduces conduction losses. Miniature encapsulation is ideal for handheld and portable applications where space is limited.

Diode configuration: Independent DC reverse withstand voltage (Vr): 40V Average rectified current (Io): 5A Forward voltage drop (Vf): 550mV@5A DC reverse withstand voltage (Vr) 40 Average rectified current (Io) 5 Reverse current (Ir) 0.5

VR/600V IR/0.01mA VF/1.75V IO/16A Trr/35ns