Diode/Bridge Rectifier

Rectifier bridge@@: DC reverse withstand voltage (Vr): 1kV Average rectified current (Io): 10A Forward voltage drop (Vf): 1.1V@5A Reverse current (Ir): 10μA@1kV Forward surge current (Ifsm): 220A Working temperature: -55℃~+150℃@(Tj)

This Schottky diode barrier diode is suitable for high-speed switching applications, circuit protection, and voltage clamping. Very low forward voltage reduces conduction losses. Miniature encapsulation is ideal for space-constrained handheld and portable applications. The BAT54M3T5G device is a derivative of our popular SOT-23 3-lead device with SOT-723 encapsulation. This device is ideal for low power applications where board space is at a premium.

Rectifier bridge

This Schottky diode is suitable for high-speed switching applications, circuit protection, and voltage clamping. Very low forward voltage reduces conduction losses. Miniature encapsulation is ideal for handheld and portable applications where space is limited.

30V, 100mA, VF=0.35V@10mA

The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. The device is suitable for low-voltage, high-frequency rectification, or applications employing freewheeling and polarity protection diodes, where compact size and weight are critical to the system.