Diode/Bridge Rectifier

I(AV) Silicon carbide 30.0 VRRM(V) 150 IFsM(A) 220 VFM(V) 0.68 VFMI(AV)(A) 30 IRM@VRRM(μA) 1.5

40V, 3A, VF=0.55V@3A Silicon carbide original model changed, original model: SS34, same performance.

Silicon carbideSBD1200V30A special

Silicon carbideSBD1200V30A special

100V, 200mA, trr=4ns, VF=1V@10mA, PD=350mW

600V, 1A, VF=1.25V@1A

Diode configuration: 1 pair of common cathode DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 10A Forward voltage drop (Vf): 850mV@5A Reverse current (Ir): 5uA@100V

Common Yin