Diode/Bridge Rectifier

China Taiwan groove chip LOW VF≧0.6

Silicon Carbide Diode

75V, 250mA, trr=4ns, VF=1.25V@150mA, PD=150mW

Small signal switch diode 10V, 3A

DC reverse withstand voltage (Vr): 100V Silicon carbide Silicon carbide average rectified current (Io): 3A Forward voltage drop (Vf): 850mV@3A Silicon carbide reverse current (Ir): 50μA@100V

DC reverse withstand voltage (Vr): 100V Silicon carbide Silicon carbide average rectified current (Io): 3A Forward voltage drop (Vf): 850mV@3A Silicon carbide reverse current (Ir): 50μA@100V

DC Reverse Withstand Voltage (Vr) 1000 Average Rectified Current (Io) 10 Forward Surge Current (Ifsm) 220 Reverse Current (Ir) 10

ptot: 0.2W VR:80V IO:0.25A VF:1.25V@150MA Trr 4ns

schottky,VRRM=40V Silicon carbide IFM=1A VF<0.6V SDO-123

schottky,VRRM=40V Silicon carbide IFM=1A VF<0.6V SDO-123