Diode/Bridge Rectifier

DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 10A Forward voltage drop (Vf): 700mV@10A Reverse current (Ir): 200uA@100V

IO0.2(A)/VR30(V)/IFSM0.6(A)/VF(MAX@25℃)1(V)@IF0.1(A)/IR(25℃)@VR2(uA)/CJ10 (pF)/Trr5(ns)

IF(A) 1 VRRM(V) 400 IFSM(A) 30 VFM@IF(V) 1.3 IRM@VRRM(uA) 5 trr(ns) 150

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150°

150°

The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. Advanced geometries employ oxide passivation and epitaxial structures with metal-covered contacts. The Schottky diode is suitable for low-voltage, high-frequency rectification, or applications employing freewheeling and polarity protection diodes, where compact size and weight are critical to the system.

VR=100V IO=5A VF=0.85V@5A

High conduction ultrafast diodes from Process 1R. See MMBD1201-1205 for characteristics.