Diode/Bridge Rectifier

1000V, 1A, VF=1V@1A, rectifier diode

70V, 200mA, trr=6ns, VF=1.25V@150mA, PD=225mW

MUR860-B1-0000HF

This ultrafast power rectifier is suitable for high voltage, high frequency rectification, or as a freewheeling and protection diode in surface mount applications where compact size and weight are critical to the system.

HS3GB-F1-0000HF

A pair of common cathode VR=45V IO=10A VF=0.74V@10A

DC reverse withstand voltage (Vr): 60V Silicon carbide Silicon carbide average rectified current (Io): 3A \nForward voltage drop (Vf): 700mV@3A Silicon carbide reverse current (Ir): 500μA@60V

DC reverse withstand voltage (Vr): 60V Silicon carbide Silicon carbide average rectified current (Io): 3A \nForward voltage drop (Vf): 700mV@3A Silicon carbide reverse current (Ir): 500μA@60V

The RHRG75120 is a very fast diode with soft recovery characteristics. It has the half-recovery time of an ultrafast diode and uses a silicon nitride passivation ion-implanted epitaxial planar structure. These devices are suitable as freewheeling/clamping diodes, as well as diodes in various switching power supply and other power switching applications. Its low stored charge and very fast soft recovery minimize ringing and electrical interference in many power switching circuits, reducing power dissipation within switching transistors.