Diode/Bridge Rectifier

Diode configuration: Stand-alone DC reverse withstand voltage (Vr): 200V Average rectified current (Io): 5A Forward voltage drop (Vf): 950mV@5A Reverse current (Ir): 0.5mA@200V

This standard rectifier is suitable for general purpose and low power applications.

1000V, 1A, VF=1V@1A

Silicon carbide (SiC) Schottky diode uses a new technology that can provide excellent switching performance and has higher reliability than silicon. Silicon carbide's no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance make it a next-generation power semiconductor product. System benefits include highest energy efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Llew

DC reverse withstand voltage (Vr) 60 Average rectified current (Io) 2 Reverse current (Ir) 0.5

DC reverse withstand voltage (Vr) 60 Average rectified current (Io) 2 Reverse current (Ir) 0.5

Diode configuration: Standalone DC reverse withstand voltage (Vr): 60V Average rectified current (Io): 5A Forward voltage drop (Vf): 700mV@5A Reverse current (Ir): 500uA@60V