Diode/Bridge Rectifier

60V,1A,VF=0.7V@1A

75V, 125mA, trr=4ns, VF=1.25V@150mA, PD=150mW

1000V, 1A, [email protected]

The FFP30S60S is a STEALTH II diode with soft recovery characteristics. It adopts silicon nitride passivation ion implantation epitaxial planar structure. The device is suitable for use as a freewheeling boost diode in switching power supplies and other power switching applications. Their low stored charge and very fast soft recovery minimize ringing and electrical interference in many power switching circuits, reducing power dissipation in switching transistors.

120V, 20A, VF=0.54V@20A

Diode configuration: Independent DC reverse withstand voltage (Vr): 600V Average rectified current (Io): 2A Forward voltage drop (Vf): 1.3V@2A Reverse current (Ir): 5uA@600V Reverse recovery time ( trr): 50ns Operating temperature: -65℃~+175℃@(Tj)