Diode/Bridge Rectifier

DC Reverse Withstand Voltage (Vr) 40 Average Rectified Current (Io) 350 Reverse Current (Ir) 5 Peak Before Surge Current (IFsM) 1.5

The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. The Schottky diode's advanced geometry features chromium barrier metal, oxide passivation, and epitaxy with metal-covered contacts. This is suitable for low-voltage high-frequency inverters, freewheeling diodes and polarity protection diodes.

Three-phase Rectifier bridge stack, DC reverse withstand voltage (Vr): 1kV Average rectified current (Io): 50A Forward voltage drop (Vf): 1V@10A Forward surge current (Ifsm): 500A

30V, 200mA

DC reverse withstand voltage (Vr) 40 Average rectified current (Io) 1 Reverse current (Ir) 0.5

DC reverse withstand voltage (Vr) 40 Average rectified current (Io) 1 Reverse current (Ir) 0.5

Rectifier bridge: DC reverse withstand voltage (Vr): 1kV Average rectified current (Io): 4A Forward voltage drop (Vf): 1.1@2A Reverse current (Ir): 5μA@1kV Forward surge current (Ifsm) 175A Working temperature: -55℃~+150℃@(Tj)

200V 1A