Diode/Bridge Rectifier

I(AV) 5 VRRM(V) 40 IFsM(A) 120 VFM(V) 0.55 VFMI(AV)(A) 5 IRM@VRRM(μA) 1

The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. The Schottky diode's advanced geometry employs oxide passivation and epitaxy with metal-covered contacts. The device is suitable for low-voltage, high-frequency rectification, or applications employing freewheeling and polarity protection diodes, where compact size and weight are critical to the system.

600V, 1A, VF=1.3V@1A

This switching diode is suitable for high speed switching applications.