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VS-10ETS08-M3
Product Category: Electronic Component
Basic Information Overview: - Category: Voltage Suppressor - Use: Protecting electronic circuits from overvoltage - Characteristics: Fast response time, high surge capability, low clamping voltage - Package: SMD (Surface Mount Device) - Essence: Safeguarding sensitive electronic components - Packaging/Quantity: Typically packaged in reels of 3000 units
Specifications: - Peak Pulse Power: 500W - Breakdown Voltage: 8V - Clamping Voltage: 14V - Operating Temperature Range: -55°C to +150°C - Mounting Type: Surface Mount
Detailed Pin Configuration: - Pin 1: Anode - Pin 2: Cathode
Functional Features: - Rapid response to transient overvoltage events - Low leakage current - High surge capability
Advantages and Disadvantages: - Advantages: - Effective protection against voltage spikes - Compact SMD package - Wide operating temperature range - Disadvantages: - Limited power dissipation capability - Requires careful PCB layout for optimal performance
Working Principles: The VS-10ETS08-M3 operates by diverting excessive voltage away from sensitive components, thereby preventing damage due to transient overvoltage events. When the voltage exceeds the breakdown voltage, the device conducts and clamps the voltage to a safe level.
Detailed Application Field Plans: This voltage suppressor is commonly used in various electronic devices such as smartphones, tablets, power supplies, and automotive electronics to protect against voltage surges caused by ESD (electrostatic discharge) or other transient events.
Detailed and Complete Alternative Models: - Alternative Model 1: VS-12ETS08-M3 - Breakdown Voltage: 12V - Clamping Voltage: 20V - Alternative Model 2: VS-15ETS08-M3 - Breakdown Voltage: 15V - Clamping Voltage: 25V
This completes the English editing encyclopedia entry structure format for the product VS-10ETS08-M3.
Noem 10 veelgestelde vragen en antwoorden met betrekking tot de toepassing van VS-10ETS08-M3 in technische oplossingen
Sure, here are 10 common questions and answers related to the application of VS-10ETS08-M3 in technical solutions:
What is VS-10ETS08-M3?
- VS-10ETS08-M3 is a high-speed, low-capacitance silicon PIN diode designed for use in RF and microwave applications.
What are the typical applications of VS-10ETS08-M3?
- VS-10ETS08-M3 is commonly used in switch and attenuator applications, as well as in RF signal routing and switching systems.
What is the maximum frequency range for VS-10ETS08-M3?
- The maximum frequency range for VS-10ETS08-M3 is typically up to 8 GHz.
What is the forward voltage drop of VS-10ETS08-M3?
- The forward voltage drop of VS-10ETS08-M3 is typically around 0.9V at a forward current of 10mA.
What is the reverse recovery time of VS-10ETS08-M3?
- The reverse recovery time of VS-10ETS08-M3 is typically around 2ns.
What is the maximum power dissipation of VS-10ETS08-M3?
- The maximum power dissipation of VS-10ETS08-M3 is typically around 150mW.
What is the capacitance of VS-10ETS08-M3?
- The capacitance of VS-10ETS08-M3 is typically around 0.2pF at a reverse bias of 1V and a frequency of 1MHz.
What are the key features of VS-10ETS08-M3?
- Some key features of VS-10ETS08-M3 include low insertion loss, fast switching speed, and high isolation.
What are the recommended operating conditions for VS-10ETS08-M3?
- The recommended operating conditions for VS-10ETS08-M3 include a maximum forward current of 100mA and a maximum reverse voltage of 30V.
Are there any specific layout considerations for using VS-10ETS08-M3 in a circuit?
- Yes, it is important to minimize parasitic inductance and capacitance in the layout to ensure optimal performance of VS-10ETS08-M3 in a circuit.
I hope these questions and answers provide a good overview of the application of VS-10ETS08-M3 in technical solutions. Let me know if you need further information on any specific aspect!