STW58N60DM2AG

Introduction

The STW58N60DM2AG is a power MOSFET belonging to the category of semiconductor devices. It is widely used in various electronic applications due to its unique characteristics and performance.

Basic Information Overview

• Category: Semiconductor device
• Use: Power switching applications
• Characteristics: High voltage capability, low on-resistance, fast switching speed
• Package: TO-247
• Essence: Efficient power management
• Packaging/Quantity: Typically packaged individually

Specifications

The STW58N60DM2AG features include: - Voltage Rating: 600V - Current Rating: 58A - On-Resistance: 0.041 ohms - Gate Charge: 75nC - Operating Temperature: -55°C to 150°C

Detailed Pin Configuration

The pin configuration of STW58N60DM2AG typically includes the following pins: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

• High voltage capability allows for use in demanding applications
• Low on-resistance minimizes power losses
• Fast switching speed enables efficient power management

Advantages and Disadvantages

Advantages: - High voltage capability - Low on-resistance - Fast switching speed

Disadvantages: - Sensitive to overvoltage conditions - Higher cost compared to standard MOSFETs

Working Principles

The STW58N60DM2AG operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device.

Detailed Application Field Plans

The STW58N60DM2AG finds extensive application in the following fields: - Switched-mode power supplies - Motor control - Inverters - Industrial automation

Detailed and Complete Alternative Models

Some alternative models to STW58N60DM2AG include: - IRFP460 - FDPF51N25 - IXFK44N50Q

In conclusion, the STW58N60DM2AG is a highly capable power MOSFET with a wide range of applications in power electronics and related fields.

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