STP9NK80Z - Semiconductor Device Encyclopedia Entry

Introduction

The STP9NK80Z is a power MOSFET belonging to the category of semiconductor devices. This entry provides an overview of the basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models of the STP9NK80Z.

Basic Information Overview

• Category: Power MOSFET
• Use: The STP9NK80Z is used as a high-voltage N-channel enhancement-mode power MOSFET designed for high-speed switching applications.
• Characteristics: It exhibits low input and output capacitance, fast switching speed, and low on-state resistance, making it suitable for use in power supplies, lighting systems, and motor control applications.
• Package: The STP9NK80Z is typically available in a TO-220 package.
• Essence: Its essence lies in providing efficient and reliable high-voltage switching capabilities.
• Packaging/Quantity: It is commonly packaged individually or in reels containing multiple units.

Specifications

• Voltage Rating: 800V
• Current Rating: 9A
• On-State Resistance (RDS(on)): 1.15Ω
• Gate Threshold Voltage (VGS(th)): 3V
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The STP9NK80Z typically has three pins: 1. Gate (G): Input terminal for controlling the switching operation. 2. Drain (D): Output terminal connected to the load. 3. Source (S): Common terminal and reference point for the input and output circuits.

Functional Features

• High-Speed Switching: Enables rapid switching operations in various applications.
• Low On-State Resistance: Reduces power dissipation and improves efficiency.
• Low Input and Output Capacitance: Facilitates faster switching transitions and minimizes energy losses.

Advantages and Disadvantages

Advantages

• High voltage rating suitable for diverse applications.
• Low on-state resistance enhances power efficiency.
• Fast switching speed enables high-performance operation.

Disadvantages

• Higher gate threshold voltage may require specific drive circuitry.
• Limited current handling capacity compared to higher-rated devices.

Working Principles

The STP9NK80Z operates based on the principles of field-effect transistors, utilizing the electric field at the gate to control the flow of current between the drain and source terminals. When a sufficient gate-source voltage is applied, the device enters the conducting state, allowing current to flow through.

Detailed Application Field Plans

The STP9NK80Z finds extensive application in the following fields: 1. Power Supplies: Used in switch-mode power supplies for efficient voltage regulation. 2. Lighting Systems: Employed in LED drivers and ballast circuits for controlling illumination. 3. Motor Control: Integrated into motor drive circuits for precise speed and torque control.

Detailed and Complete Alternative Models

Some alternative models to the STP9NK80Z include: - STP10NK80Z: A higher current variant with similar voltage and resistance characteristics. - STP6NK90Z: Offers lower on-state resistance and faster switching speed for specific applications. - STP16NK50Z: Provides higher current handling capability while maintaining comparable voltage ratings.

In conclusion, the STP9NK80Z power MOSFET serves as a versatile component for high-voltage switching applications, offering a balance of performance, efficiency, and reliability.

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