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STP3N80K5

STP3N80K5

Product Overview

Category

The STP3N80K5 belongs to the category of power MOSFETs.

Use

It is commonly used as a switching device in power supply applications, motor control, and other high-power electronic circuits.

Characteristics

  • High voltage capability
  • Low input capacitance
  • Fast switching speed
  • Low on-resistance

Package

The STP3N80K5 is typically available in a TO-220 package.

Essence

The essence of the STP3N80K5 lies in its ability to efficiently control high power loads with minimal losses.

Packaging/Quantity

It is usually packaged in reels or tubes, with varying quantities depending on the supplier.

Specifications

  • Drain-Source Voltage (VDS): 800V
  • Continuous Drain Current (ID): 3A
  • On-Resistance (RDS(on)): 2.5Ω
  • Power Dissipation (PD): 40W
  • Gate-Source Voltage (VGS): ±30V
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The STP3N80K5 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability allows for use in high-power applications.
  • Low input capacitance enables fast switching speeds.
  • Low on-resistance minimizes power losses and heat generation.

Advantages

  • Suitable for high voltage applications
  • Efficient power handling
  • Fast switching speed

Disadvantages

  • Higher on-resistance compared to some alternative models
  • Limited current-carrying capacity

Working Principles

The STP3N80K5 operates based on the principles of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The STP3N80K5 is well-suited for use in: - Switched-mode power supplies - Motor control circuits - High-power lighting systems - Audio amplifiers

Detailed and Complete Alternative Models

Some alternative models to the STP3N80K5 include: - IRFP460: Similar voltage and current ratings - FQP3N80: Comparable specifications - IXFH3N80: Alternative package option

In conclusion, the STP3N80K5 power MOSFET offers high voltage capability, fast switching speed, and low on-resistance, making it suitable for various high-power electronic applications.

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Noem 10 veelgestelde vragen en antwoorden met betrekking tot de toepassing van STP3N80K5 in technische oplossingen

  1. What is the maximum drain-source voltage rating of STP3N80K5?

    • The maximum drain-source voltage rating of STP3N80K5 is 800 volts.
  2. What is the continuous drain current rating of STP3N80K5?

    • The continuous drain current rating of STP3N80K5 is 3 amperes.
  3. What is the on-state resistance (RDS(on)) of STP3N80K5?

    • The on-state resistance (RDS(on)) of STP3N80K5 is typically 3.8 ohms.
  4. What is the gate threshold voltage of STP3N80K5?

    • The gate threshold voltage of STP3N80K5 typically ranges from 2 to 4 volts.
  5. What are the typical applications of STP3N80K5 in technical solutions?

    • STP3N80K5 is commonly used in power supplies, motor control, and lighting applications.
  6. What is the maximum junction temperature of STP3N80K5?

    • The maximum junction temperature of STP3N80K5 is 150 degrees Celsius.
  7. Is STP3N80K5 suitable for high-frequency switching applications?

    • Yes, STP3N80K5 is suitable for high-frequency switching due to its low on-state resistance and fast switching characteristics.
  8. Does STP3N80K5 require a heat sink for certain applications?

    • Depending on the application and power dissipation, a heat sink may be required for STP3N80K5 to ensure proper thermal management.
  9. What are the key advantages of using STP3N80K5 in technical solutions?

    • Some key advantages of STP3N80K5 include high voltage capability, low on-state resistance, and reliable performance in various power applications.
  10. Are there any specific considerations for driving the gate of STP3N80K5?

    • It's important to ensure proper gate drive voltage and current to fully enhance the performance of STP3N80K5, as well as to prevent potential issues related to gate control.