Afbeelding kan een representatie zijn.
Zie specificaties voor productdetails.
STP26N60M2

STP26N60M2

Introduction

The STP26N60M2 is a power MOSFET belonging to the category of electronic components. It is widely used in various applications due to its unique characteristics and functional features.

Basic Information Overview

  • Category: Power MOSFET
  • Use: The STP26N60M2 is utilized for switching and amplifying electronic signals in power supply, motor control, and lighting applications.
  • Characteristics: This MOSFET offers low on-state resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power conversion.
  • Package: The STP26N60M2 is typically available in a TO-220 package, which provides thermal efficiency and ease of mounting.
  • Essence: Its essence lies in providing efficient power management and control in various electronic systems.
  • Packaging/Quantity: It is commonly sold in reels or tubes containing multiple units, with specific quantities varying by manufacturer and distributor.

Specifications

  • Voltage Rating: 600V
  • Current Rating: 26A
  • On-State Resistance: 0.12Ω
  • Gate-Source Voltage (Max): ±20V
  • Power Dissipation: 280W
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The STP26N60M2 typically features a standard pin configuration with three pins: Gate (G), Drain (D), and Source (S).

Functional Features

  • Low On-State Resistance: Enables minimal power loss during conduction.
  • High Switching Speed: Facilitates rapid switching transitions, enhancing efficiency.
  • Low Gate Charge: Allows for quick and precise control of the MOSFET.

Advantages

  • High Efficiency: Due to low on-state resistance and high switching speed.
  • Thermal Performance: The TO-220 package ensures effective heat dissipation.
  • Versatile Application: Suitable for diverse power management needs.

Disadvantages

  • Sensitivity to Overvoltage: Requires appropriate protection circuitry in high-voltage applications.
  • Gate Drive Complexity: May necessitate careful attention to drive circuit design for optimal performance.

Working Principles

The STP26N60M2 operates based on the principles of field-effect transistors, utilizing the voltage applied to the gate terminal to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

  1. Power Supply Systems: Utilized in switch-mode power supplies for efficient energy conversion.
  2. Motor Control: Employed in motor drive circuits for precise and responsive control.
  3. Lighting Applications: Used in LED drivers and ballast circuits for effective power regulation.

Detailed and Complete Alternative Models

  1. STP16NF06L: A lower-power alternative suitable for less demanding applications.
  2. IRFP4668: Offers similar performance with a different package and pin configuration.

In conclusion, the STP26N60M2 power MOSFET serves as a crucial component in modern electronic systems, offering high efficiency and versatile application capabilities across various industries.

Word Count: 464

Noem 10 veelgestelde vragen en antwoorden met betrekking tot de toepassing van STP26N60M2 in technische oplossingen

  1. What is the STP26N60M2?

    • The STP26N60M2 is a power MOSFET designed for high-voltage, high-speed switching applications.
  2. What are the key features of the STP26N60M2?

    • The key features include a low on-state resistance, high switching speed, and a high avalanche energy capability.
  3. What are the typical applications of the STP26N60M2?

    • Typical applications include switch mode power supplies, motor control, and electronic lamp ballasts.
  4. What is the maximum voltage and current rating of the STP26N60M2?

    • The maximum voltage rating is 600V and the maximum continuous drain current is 26A.
  5. What is the on-state resistance of the STP26N60M2?

    • The on-state resistance is typically around 0.12 ohms.
  6. Does the STP26N60M2 require a heat sink for operation?

    • Yes, for high-power applications or continuous operation, a heat sink is recommended to dissipate heat effectively.
  7. What is the gate-source voltage for proper operation of the STP26N60M2?

    • The gate-source voltage should be within the specified range of +/- 20V for reliable performance.
  8. Can the STP26N60M2 be used in parallel to increase current handling capability?

    • Yes, the MOSFETs can be paralleled to share the load and increase the overall current handling capacity.
  9. What are the thermal considerations for the STP26N60M2 in a circuit design?

    • Proper thermal management is crucial, and the junction temperature should be kept within the specified limits for reliable operation.
  10. Are there any specific layout considerations when using the STP26N60M2 in a PCB design?

    • It's important to minimize parasitic inductance and ensure proper gate driving to optimize performance and reduce EMI effects.