STMicroelectronics
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STL11N65M2

STL11N65M2

Product Overview

Category: Power MOSFET
Use: Switching applications in power supplies, lighting, and motor control
Characteristics: High voltage capability, low input capacitance, ruggedness, and fast switching speed
Package: TO-264
Essence: N-channel enhancement mode power MOSFET
Packaging/Quantity: Tape and reel, 800 units per reel

Specifications

  • Voltage Rating: 650V
  • Current Rating: 11A
  • RDS(ON): 0.45Ω
  • Gate Threshold Voltage: 3V
  • Maximum Operating Temperature: 150°C
  • Gate Charge (Qg): 20nC

Detailed Pin Configuration

  1. Gate (G)
  2. Drain (D)
  3. Source (S)

Functional Features

  • Low input and output capacitance for high-speed switching
  • Enhanced ruggedness for reliable performance in harsh conditions
  • Low RDS(ON) for reduced conduction losses
  • Avalanche energy specified

Advantages and Disadvantages

Advantages: - Fast switching speed - High voltage capability - Low input capacitance

Disadvantages: - Higher RDS(ON) compared to some alternative models - Relatively higher gate threshold voltage

Working Principles

STL11N65M2 operates based on the principles of field-effect transistors. When a suitable voltage is applied to the gate terminal, it creates an electric field that controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is suitable for various applications including: - Power supplies - Lighting systems - Motor control circuits - Inverters - Switched-mode power supplies

Detailed and Complete Alternative Models

  1. STP11NM60N
  2. IRFP4568
  3. FDPF18N50

In conclusion, the STL11N65M2 is a high-voltage power MOSFET designed for efficient switching applications in various electronic systems. Its characteristics, specifications, and functional features make it suitable for a wide range of applications, despite having some limitations compared to alternative models.

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Noem 10 veelgestelde vragen en antwoorden met betrekking tot de toepassing van STL11N65M2 in technische oplossingen

  1. What is the maximum drain-source voltage rating of the STL11N65M2 MOSFET?

    • The maximum drain-source voltage rating of the STL11N65M2 MOSFET is 650V.

  2. What is the continuous drain current rating of the STL11N65M2 MOSFET?

    • The continuous drain current rating of the STL11N65M2 MOSFET is 11A.

  3. What is the on-state resistance (RDS(on)) of the STL11N65M2 MOSFET?

    • The on-state resistance (RDS(on)) of the STL11N65M2 MOSFET is typically around 0.65 ohms.

  4. Can the STL11N65M2 MOSFET be used in high-frequency switching applications?

    • Yes, the STL11N65M2 MOSFET can be used in high-frequency switching applications due to its fast switching characteristics.

  5. What are the typical gate-source threshold voltage and gate charge of the STL11N65M2 MOSFET?

    • The typical gate-source threshold voltage is around 4V, and the gate charge is approximately 16nC.

  6. Is the STL11N65M2 MOSFET suitable for use in power supply and motor control applications?

    • Yes, the STL11N65M2 MOSFET is suitable for power supply and motor control applications due to its high voltage and current ratings.

  7. Does the STL11N65M2 MOSFET require a heat sink for thermal management?

    • Depending on the application and power dissipation, a heat sink may be required for efficient thermal management of the STL11N65M2 MOSFET.

  8. What are the recommended operating temperature range and storage temperature range for the STL11N65M2 MOSFET?

    • The recommended operating temperature range is -55°C to 150°C, and the storage temperature range is -55°C to 175°C.

  9. Can the STL11N65M2 MOSFET be used in automotive and industrial applications?

    • Yes, the STL11N65M2 MOSFET is suitable for automotive and industrial applications where high voltage and current handling capabilities are required.

  10. Are there any specific considerations for driving the gate of the STL11N65M2 MOSFET?

    • It is important to ensure proper gate drive voltage and current to fully enhance the performance of the STL11N65M2 MOSFET, and to minimize switching losses.