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STF28N60DM2
Introduction
The STF28N60DM2 is a power MOSFET belonging to the category of semiconductor devices. This device is widely used in various electronic applications due to its unique characteristics and performance.
Basic Information Overview
- Category: Power MOSFET
- Use: Switching and amplification in electronic circuits
- Characteristics: High voltage capability, low on-resistance, fast switching speed
- Package: TO-220FP
- Essence: Efficient power management and control
- Packaging/Quantity: Typically available in reels or tubes containing multiple units
Specifications
- Voltage Rating: 600V
- Current Rating: 28A
- On-Resistance: 0.19Ω
- Gate Charge: 38nC
- Operating Temperature: -55°C to 150°C
- Datasheet: STF28N60DM2 Datasheet
Detailed Pin Configuration
The STF28N60DM2 features a standard pin configuration for a TO-220FP package: 1. Source (S) 2. Gate (G) 3. Drain (D)
Functional Features
- High Voltage Capability: Suitable for high-power applications
- Low On-Resistance: Minimizes power loss and heat generation
- Fast Switching Speed: Enables efficient operation in switching circuits
Advantages and Disadvantages
Advantages
- High voltage capability
- Low on-resistance
- Fast switching speed
Disadvantages
- Higher gate charge compared to some alternative models
- Relatively higher cost compared to lower-rated MOSFETs
Working Principles
The STF28N60DM2 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device. When a suitable voltage is applied to the gate terminal, the MOSFET allows current to flow between the drain and source terminals, effectively acting as a switch or amplifier in electronic circuits.
Detailed Application Field Plans
The STF28N60DM2 finds extensive use in various applications, including: - Switching power supplies - Motor control - Inverters - Audio amplifiers - LED lighting
Detailed and Complete Alternative Models
Some alternative models to the STF28N60DM2 include: - IRF840 - FDP8870 - IXFN38N100Q2
In conclusion, the STF28N60DM2 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of electronic applications requiring efficient power management and control.
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Noem 10 veelgestelde vragen en antwoorden met betrekking tot de toepassing van STF28N60DM2 in technische oplossingen
What is the maximum drain-source voltage rating of STF28N60DM2?
- The maximum drain-source voltage rating of STF28N60DM2 is 600V.
What is the continuous drain current rating of STF28N60DM2?
- The continuous drain current rating of STF28N60DM2 is 28A.
What is the on-resistance of STF28N60DM2?
- The on-resistance of STF28N60DM2 is typically 0.14 ohms.
What is the gate threshold voltage of STF28N60DM2?
- The gate threshold voltage of STF28N60DM2 is typically 3V.
What are the typical applications for STF28N60DM2?
- STF28N60DM2 is commonly used in applications such as motor control, power supplies, and inverters.
What is the operating temperature range of STF28N60DM2?
- The operating temperature range of STF28N60DM2 is typically -55°C to 150°C.
Does STF28N60DM2 require a heat sink for operation?
- It is recommended to use a heat sink when operating STF28N60DM2 at high currents or in high-temperature environments.
Is STF28N60DM2 suitable for switching applications?
- Yes, STF28N60DM2 is suitable for high-speed switching applications due to its low on-resistance and fast switching characteristics.
What is the gate charge of STF28N60DM2?
- The gate charge of STF28N60DM2 is typically 30nC.
Can STF28N60DM2 be used in parallel to increase current handling capability?
- Yes, STF28N60DM2 can be used in parallel to increase the overall current handling capability in high-power applications. However, proper attention should be given to current sharing and thermal management.