Afbeelding kan een representatie zijn.
Zie specificaties voor productdetails.
STB34NM60N

STB34NM60N

Introduction

STB34NM60N is a power MOSFET belonging to the category of semiconductor devices. This device is widely used in various electronic applications due to its unique characteristics and functional features.

Basic Information Overview

  • Category: Semiconductor Device
  • Use: Power switching applications
  • Characteristics: High voltage capability, low input capacitance, fast switching speed
  • Package: TO-220FP
  • Essence: Power MOSFET for efficient power management
  • Packaging/Quantity: Typically available in reels or tubes containing multiple units

Specifications

  • Voltage Rating: 600V
  • Current Rating: 34A
  • On-state Resistance (RDS(on)): 0.09 ohms
  • Gate Threshold Voltage: 3V
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The STB34NM60N follows the standard pin configuration for a TO-220FP package: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

  • Low input capacitance for fast switching
  • High voltage capability for power applications
  • Low on-state resistance for reduced power dissipation

Advantages

  • Efficient power management
  • Fast switching speed
  • Suitable for high voltage applications

Disadvantages

  • Higher cost compared to some alternative models
  • May require additional heat sinking for high-power applications

Working Principles

The STB34NM60N operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device. When a sufficient voltage is applied to the gate terminal, the device allows current to flow between the source and drain terminals, enabling power switching functions.

Detailed Application Field Plans

The STB34NM60N finds extensive use in the following application fields: - Switching power supplies - Motor control systems - Inverters and converters - Industrial automation equipment

Detailed and Complete Alternative Models

Some alternative models to STB34NM60N include: - IRF840 - FDP8878 - IXFN38N100

In conclusion, the STB34NM60N power MOSFET offers high voltage capability, fast switching speed, and efficient power management, making it suitable for a wide range of electronic applications.

[Word Count: 314]

Noem 10 veelgestelde vragen en antwoorden met betrekking tot de toepassing van STB34NM60N in technische oplossingen

  1. What is the maximum drain current of STB34NM60N?

    • The maximum drain current of STB34NM60N is 34A.
  2. What is the maximum drain-source voltage of STB34NM60N?

    • The maximum drain-source voltage of STB34NM60N is 600V.
  3. What is the on-resistance of STB34NM60N?

    • The on-resistance of STB34NM60N is typically 0.034 ohms.
  4. What are the typical applications of STB34NM60N?

    • STB34NM60N is commonly used in power supplies, motor control, and lighting applications.
  5. Is STB34NM60N suitable for high-frequency switching applications?

    • Yes, STB34NM60N is suitable for high-frequency switching due to its low on-resistance and fast switching characteristics.
  6. Does STB34NM60N require a heatsink for thermal management?

    • Depending on the application and power dissipation, a heatsink may be required for optimal thermal management.
  7. What is the gate threshold voltage of STB34NM60N?

    • The gate threshold voltage of STB34NM60N typically ranges from 2V to 4V.
  8. Can STB34NM60N be used in automotive applications?

    • Yes, STB34NM60N is suitable for automotive applications, such as electronic control units (ECUs) and motor drives.
  9. What are the recommended operating conditions for STB34NM60N?

    • The recommended operating temperature range for STB34NM60N is -55°C to 150°C.
  10. Is STB34NM60N RoHS compliant?

    • Yes, STB34NM60N is RoHS compliant, making it suitable for environmentally conscious designs.