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STB28N60M2
Introduction
The STB28N60M2 is a power MOSFET belonging to the category of semiconductor devices. This device is commonly used in various electronic applications due to its unique characteristics and functional features.
Basic Information Overview
- Category: Semiconductor Device
- Use: Power switching applications
- Characteristics: High voltage capability, low on-resistance, fast switching speed
- Package: TO-263-3 (D2PAK)
- Essence: Power MOSFET for high voltage applications
- Packaging/Quantity: Typically available in reels or tubes containing multiple units
Specifications
- Voltage Rating: 600V
- Current Rating: 28A
- On-Resistance: 0.14 Ohms
- Gate Charge: 38nC
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The STB28N60M2 follows the standard pin configuration for a TO-263-3 package: 1. Source (S) 2. Gate (G) 3. Drain (D)
Functional Features
- High Voltage Capability: Suitable for applications requiring high voltage handling.
- Low On-Resistance: Minimizes power loss and improves efficiency.
- Fast Switching Speed: Enables rapid switching in power control circuits.
Advantages and Disadvantages
Advantages
- High voltage capability
- Low on-resistance
- Fast switching speed
Disadvantages
- Higher gate charge compared to some alternative models
- Sensitive to static electricity
Working Principles
The STB28N60M2 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device. When a suitable voltage is applied to the gate terminal, the device switches between its on and off states, allowing or blocking the flow of current between the source and drain terminals.
Detailed Application Field Plans
The STB28N60M2 finds extensive use in various power electronics applications, including: - Switched-mode power supplies - Motor control - Inverters - LED lighting - Audio amplifiers
Detailed and Complete Alternative Models
Some alternative models to the STB28N60M2 include: - IRFP4668PbF - FDPF33N25T - IXFN38N100Q2
In conclusion, the STB28N60M2 is a versatile power MOSFET with high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of power switching applications.
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Noem 10 veelgestelde vragen en antwoorden met betrekking tot de toepassing van STB28N60M2 in technische oplossingen
What is the maximum drain-source voltage of STB28N60M2?
- The maximum drain-source voltage of STB28N60M2 is 600V.
What is the continuous drain current rating of STB28N60M2?
- The continuous drain current rating of STB28N60M2 is 28A.
What is the on-state resistance (RDS(on)) of STB28N60M2?
- The on-state resistance (RDS(on)) of STB28N60M2 is typically 0.08 ohms.
What is the gate threshold voltage of STB28N60M2?
- The gate threshold voltage of STB28N60M2 is typically 3V.
What are the typical applications for STB28N60M2?
- STB28N60M2 is commonly used in applications such as switch mode power supplies, motor control, and lighting ballasts.
What is the operating temperature range of STB28N60M2?
- The operating temperature range of STB28N60M2 is -55°C to 150°C.
Does STB28N60M2 have built-in protection features?
- Yes, STB28N60M2 has built-in protection features such as overcurrent protection and thermal shutdown.
Is STB28N60M2 suitable for high-frequency switching applications?
- Yes, STB28N60M2 is suitable for high-frequency switching applications due to its low RDS(on) and fast switching characteristics.
What package type is STB28N60M2 available in?
- STB28N60M2 is available in a TO-220 package.
Are there any recommended external components to use with STB28N60M2?
- It is recommended to use appropriate gate driver ICs and snubber circuits to optimize the performance of STB28N60M2 in technical solutions.