The STB24N60M2 is a power MOSFET belonging to the category of semiconductor devices. It is commonly used in electronic circuits for various applications due to its specific characteristics and performance.
The STB24N60M2 features the following specifications: - Voltage Rating: 600V - Current Rating: 24A - On-Resistance: 0.19Ω - Gate Threshold Voltage: 3V - Gate Charge: 40nC - Operating Temperature Range: -55°C to 150°C
The STB24N60M2 has a standard TO-220FP package with three pins: 1. Source (S): Connected to the source terminal of the MOSFET 2. Drain (D): Connected to the drain terminal of the MOSFET 3. Gate (G): Connected to the gate terminal of the MOSFET
The STB24N60M2 operates based on the principles of field-effect transistors, utilizing the electric field at the gate to control the flow of current between the source and drain terminals.
The STB24N60M2 finds application in various fields, including: - Switched Mode Power Supplies (SMPS): Used for efficient power conversion in SMPS designs. - Motor Control: Employed in motor drive circuits for controlling the speed and direction of motors. - Electronic Ballasts: Utilized in lighting systems for regulating the flow of current to fluorescent lamps.
Some alternative models to the STB24N60M2 include: - STB20N60M2: Similar specifications with a lower current rating - STB30N60M2: Higher current rating and slightly different characteristics - STB25N60M2: Comparable specifications with minor variations in performance parameters
In conclusion, the STB24N60M2 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for diverse power switching applications across various industries.
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What is the on-state resistance (RDS(on)) of STB24N60M2?
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