STB120N4F6

Introduction

The STB120N4F6 is a power MOSFET belonging to the category of semiconductor devices. This device is commonly used in electronic circuits for its high power handling capabilities and efficient switching characteristics. In this entry, we will provide an overview of the STB120N4F6, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Semiconductor Device
• Use: Power MOSFET for electronic circuits
• Characteristics: High power handling, efficient switching
• Package: TO-263-3 (D2PAK)
• Essence: Efficient power management
• Packaging/Quantity: Typically packaged in reels of 800 units

Specifications

The STB120N4F6 features a drain-source voltage (VDS) of 40V, a continuous drain current (ID) of 120A, and a low on-resistance (RDS(on)) of 4.6mΩ. Additionally, it has a gate threshold voltage (VGS(th)) of 2V and a total gate charge (Qg) of 60nC.

Detailed Pin Configuration

The STB120N4F6 follows the standard pin configuration for a TO-263-3 package, with the gate (G), drain (D), and source (S) pins clearly labeled for easy integration into circuit designs.

Functional Features

The STB120N4F6 offers high power efficiency, low conduction losses, and fast switching speeds, making it suitable for applications requiring precise power control and minimal heat dissipation.

Advantages and Disadvantages

Advantages: - High power handling capability - Low on-resistance for reduced conduction losses - Fast switching speeds for efficient power control

Disadvantages: - Higher gate capacitance may require careful driver design - Sensitivity to overvoltage conditions

Working Principles

When a sufficient gate-source voltage is applied, the STB120N4F6 allows current to flow between the drain and source terminals, effectively controlling the power flow within the circuit. Its low on-resistance ensures minimal power loss during operation.

Detailed Application Field Plans

The STB120N4F6 is commonly utilized in applications such as motor control, power supplies, DC-DC converters, and automotive systems where efficient power management and high current handling are essential.

Detailed and Complete Alternative Models

• STB140NF55T4: Similar power MOSFET with higher voltage rating
• STB80NF55-08T4: Lower current rating but suitable for lower power applications
• STB160N4F6: Higher current handling capability for more demanding applications

In conclusion, the STB120N4F6 power MOSFET offers high power handling, efficient switching characteristics, and versatile applications in various electronic circuits. Its specifications, pin configuration, functional features, and alternative models provide a comprehensive understanding of its capabilities and potential uses.

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