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STB110N55F6

STB110N55F6

Product Overview

Category

The STB110N55F6 belongs to the category of power MOSFETs.

Use

It is used as a high-voltage, fast-switching N-channel enhancement-mode power MOSFET.

Characteristics

  • High voltage capability
  • Low input capacitance
  • Fast switching speed
  • Low on-resistance

Package

The STB110N55F6 is typically available in a TO-263 package.

Essence

The essence of the STB110N55F6 lies in its ability to efficiently control high voltages and currents in various electronic applications.

Packaging/Quantity

It is commonly packaged in reels or tubes and is available in varying quantities depending on the supplier.

Specifications

  • Drain-Source Voltage (VDS): 55V
  • Continuous Drain Current (ID): 110A
  • On-Resistance (RDS(on)): 7.5mΩ
  • Gate-Source Threshold Voltage (VGS(th)): 2.5V
  • Total Gate Charge (Qg): 100nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The STB110N55F6 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability allows for use in high-power applications
  • Low input capacitance enables fast switching
  • Low on-resistance minimizes power loss and heat generation

Advantages

  • Suitable for high-voltage applications
  • Fast switching speed
  • Low on-resistance leads to improved efficiency

Disadvantages

  • Higher input capacitance compared to some alternative models
  • May require additional circuitry for optimal performance in certain applications

Working Principles

The STB110N55F6 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the flow of current between the drain and source terminals.

Detailed Application Field Plans

The STB110N55F6 is commonly used in: - Switched-mode power supplies - Motor control - Inverters - DC-DC converters - Electronic loads

Detailed and Complete Alternative Models

Some alternative models to the STB110N55F6 include: - STP110N8F6 - IRF110N55F6 - FDP110N55F6 - AOT110N55F6

In conclusion, the STB110N55F6 is a high-voltage power MOSFET with fast-switching capabilities, making it suitable for a wide range of high-power electronic applications.

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Noem 10 veelgestelde vragen en antwoorden met betrekking tot de toepassing van STB110N55F6 in technische oplossingen

  1. What is the maximum drain-source voltage rating of STB110N55F6?

    • The maximum drain-source voltage rating of STB110N55F6 is 55V.

  2. What is the continuous drain current rating of STB110N55F6?

    • The continuous drain current rating of STB110N55F6 is 110A.

  3. What is the on-state resistance (RDS(on)) of STB110N55F6?

    • The on-state resistance (RDS(on)) of STB110N55F6 is typically 5.6mΩ at VGS = 10V.

  4. What is the gate threshold voltage of STB110N55F6?

    • The gate threshold voltage of STB110N55F6 is typically 2.35V.

  5. Is STB110N55F6 suitable for high-power applications?

    • Yes, STB110N55F6 is suitable for high-power applications due to its high drain current and low on-state resistance.

  6. What type of package does STB110N55F6 come in?

    • STB110N55F6 comes in a TO-263 (D2PAK) package.

  7. Does STB110N55F6 have built-in protection features?

    • STB110N55F6 does not have built-in protection features and may require external circuitry for overcurrent or overvoltage protection.

  8. What are the typical applications for STB110N55F6?

    • Typical applications for STB110N55F6 include motor control, power supplies, DC-DC converters, and automotive systems.

  9. What is the operating temperature range of STB110N55F6?

    • The operating temperature range of STB110N55F6 is -55°C to 175°C.

  10. Is STB110N55F6 RoHS compliant?

    • Yes, STB110N55F6 is RoHS compliant, making it suitable for use in environmentally sensitive applications.