BU12TD2WNVX-TL

Basic Information Overview

• Category: Electronic Component
• Use: Power Transistor
• Characteristics: High voltage, high current capability
• Package: TO-220
• Essence: NPN Bipolar Junction Transistor
• Packaging/Quantity: 1 piece per package

Specifications

• Maximum Collector-Emitter Voltage (Vce): 1000V
• Maximum Collector Current (Ic): 12A
• Maximum Power Dissipation (Pd): 150W
• DC Current Gain (hFE): 25 - 100
• Transition Frequency (fT): 4MHz
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The BU12TD2WNVX-TL transistor has three pins: 1. Base (B) 2. Collector (C) 3. Emitter (E)

Functional Features

• High voltage and current handling capability
• Low saturation voltage
• Fast switching speed
• Suitable for power amplification and switching applications
• Robust construction for reliable operation

Advantages

• High power handling capacity
• Low saturation voltage reduces power losses
• Fast switching speed allows for efficient operation
• Wide operating temperature range enables use in various environments
• Versatile application possibilities due to its characteristics

Disadvantages

• Relatively low DC current gain compared to other transistors
• Limited transition frequency may restrict use in certain high-frequency applications

Working Principles

The BU12TD2WNVX-TL is an NPN bipolar junction transistor. It operates based on the principles of amplification and control of electrical signals. When a small current flows into the base terminal, it controls a larger current flowing between the collector and emitter terminals. This allows the transistor to amplify signals or act as a switch in electronic circuits.

Detailed Application Field Plans

The BU12TD2WNVX-TL transistor finds applications in various fields, including: 1. Power supply units 2. Motor control circuits 3. Audio amplifiers 4. Lighting systems 5. Industrial automation

Detailed and Complete Alternative Models

1. BU508DFI: NPN Power Transistor, TO-220 package, 700V Vce, 8A Ic, 80W Pd, hFE 25 - 100, fT 4MHz.
2. MJE3055T: NPN Power Transistor, TO-220 package, 60V Vce, 10A Ic, 115W Pd, hFE 20 - 70, fT 2.5MHz.
3. TIP122: NPN Darlington Transistor, TO-220 package, 100V Vce, 5A Ic, 65W Pd, hFE 1000 (min), fT 3MHz.

(Note: These alternative models are provided as examples and may not be an exhaustive list.)

In conclusion, the BU12TD2WNVX-TL is a high-voltage, high-current power transistor with excellent performance characteristics. Its robust construction, fast switching speed, and low saturation voltage make it suitable for a wide range of applications in various industries. However, its relatively low DC current gain and limited transition frequency should be considered when selecting alternative models for specific requirements.