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BR93L66FVT-WE2

BR93L66FVT-WE2

Product Overview

Category

BR93L66FVT-WE2 belongs to the category of non-volatile electrically erasable and programmable read-only memory (EEPROM) chips.

Use

This chip is commonly used for storing small amounts of data that need to be retained even when power is removed from the system. It provides a reliable and convenient solution for applications requiring non-volatile memory.

Characteristics

  • Non-volatile: The data stored in BR93L66FVT-WE2 remains intact even when power is disconnected.
  • Electrically erasable and programmable: The chip allows for easy modification and updating of stored data.
  • Small form factor: BR93L66FVT-WE2 comes in a compact package, making it suitable for space-constrained designs.
  • Low power consumption: The chip operates efficiently, minimizing energy requirements.

Package

BR93L66FVT-WE2 is available in a surface-mount 8-pin SOP (Small Outline Package). This package offers mechanical stability and ease of integration into various electronic systems.

Essence

The essence of BR93L66FVT-WE2 lies in its ability to provide non-volatile memory storage in a compact and efficient package. It enables data retention and modification without the need for external power.

Packaging/Quantity

BR93L66FVT-WE2 is typically packaged in reels or tubes, with each reel/tube containing a specific quantity of chips. The exact packaging and quantity may vary depending on the supplier and customer requirements.

Specifications

  • Memory capacity: 4Kbits (512 x 8 bits)
  • Operating voltage: 1.8V - 5.5V
  • Operating temperature range: -40°C to +85°C
  • Write endurance: 1 million cycles
  • Data retention: 100 years

Detailed Pin Configuration

BR93L66FVT-WE2 features an 8-pin SOP package with the following pin configuration:

  1. Chip Enable (CE)
  2. Serial Data Input/Output (SDI/SDO)
  3. Serial Clock (SK)
  4. Write Protect (WP)
  5. VSS (Ground)
  6. NC (No Connection)
  7. VCC (Power Supply)
  8. Serial Output Enable (SOE)

Functional Features

1. Non-volatile Memory

BR93L66FVT-WE2 provides non-volatile memory storage, ensuring that data remains intact even during power loss or system shutdown.

2. Easy Data Modification

The chip allows for easy modification of stored data through its electrically erasable and programmable functionality. This feature simplifies the updating process without requiring additional hardware.

3. Low Power Consumption

BR93L66FVT-WE2 operates with low power consumption, making it suitable for battery-powered devices and energy-efficient applications.

4. High Endurance and Data Retention

With a write endurance of 1 million cycles and data retention of up to 100 years, this chip offers reliable and long-lasting performance.

Advantages and Disadvantages

Advantages

  • Compact form factor enables integration into space-constrained designs.
  • Easy data modification without external power requirements.
  • Reliable non-volatile memory storage.
  • Low power consumption for energy-efficient operation.

Disadvantages

  • Limited memory capacity compared to other EEPROM options.
  • Higher cost per bit compared to larger memory chips.

Working Principles

BR93L66FVT-WE2 utilizes a combination of floating gate transistors and charge storage mechanisms to achieve non-volatile memory functionality. When data is written, charges are trapped in the floating gate, preserving the information even when power is removed. During read operations, the stored charges are sensed and interpreted as binary data.

Detailed Application Field Plans

BR93L66FVT-WE2 finds applications in various fields, including:

  1. Consumer Electronics: Used for storing device settings, user preferences, and calibration data in products such as smartphones, tablets, and digital cameras.
  2. Automotive: Employed in automotive systems for storing critical data like mileage, vehicle identification numbers (VINs), and configuration settings.
  3. Industrial Control Systems: Utilized in industrial control systems to store parameters, calibration data, and firmware updates.
  4. Medical Devices: Integrated into medical devices for storing patient information, device configurations, and usage logs.

Detailed and Complete Alternative Models

  1. AT24C02: 2Kbit EEPROM chip with similar characteristics and pin configuration.
  2. CAT24C04: 4Kbit EEPROM chip with extended temperature range and additional write protection features.
  3. M24C08: 8Kbit EEPROM chip with higher memory capacity and compatible pin configuration.

These alternative models offer similar functionality and can be considered based on specific application requirements.

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Noem 10 veelgestelde vragen en antwoorden met betrekking tot de toepassing van BR93L66FVT-WE2 in technische oplossingen

Sure! Here are 10 common questions and answers related to the application of BR93L66FVT-WE2 in technical solutions:

  1. Q: What is BR93L66FVT-WE2? A: BR93L66FVT-WE2 is a specific model of EEPROM (Electrically Erasable Programmable Read-Only Memory) chip manufactured by a company called ROHM Semiconductor.

  2. Q: What is the capacity of BR93L66FVT-WE2? A: BR93L66FVT-WE2 has a capacity of 8 kilobits, which is equivalent to 1024 bytes or 256 words.

  3. Q: What is the operating voltage range for BR93L66FVT-WE2? A: The operating voltage range for BR93L66FVT-WE2 is typically between 1.8V and 5.5V.

  4. Q: What is the maximum clock frequency supported by BR93L66FVT-WE2? A: BR93L66FVT-WE2 supports a maximum clock frequency of 3 MHz.

  5. Q: Can BR93L66FVT-WE2 be used for storing program code? A: No, BR93L66FVT-WE2 is primarily designed for storing small amounts of non-volatile data such as configuration settings, calibration data, or user preferences.

  6. Q: Is BR93L66FVT-WE2 suitable for automotive applications? A: Yes, BR93L66FVT-WE2 is designed to meet the requirements of automotive applications and can operate reliably in harsh environments.

  7. Q: Does BR93L66FVT-WE2 support hardware write protection? A: Yes, BR93L66FVT-WE2 has built-in write protection features that can be used to prevent accidental or unauthorized modification of data.

  8. Q: Can BR93L66FVT-WE2 be reprogrammed multiple times? A: Yes, BR93L66FVT-WE2 is an EEPROM chip, which means it can be electrically erased and reprogrammed multiple times.

  9. Q: What is the typical endurance of BR93L66FVT-WE2? A: The typical endurance of BR93L66FVT-WE2 is specified as 1 million write/erase cycles.

  10. Q: Are there any specific programming requirements for BR93L66FVT-WE2? A: Yes, BR93L66FVT-WE2 requires a specific programming voltage and timing sequence, which should be followed as per the datasheet provided by ROHM Semiconductor.

Please note that these answers are general and may vary depending on the specific application and implementation of BR93L66FVT-WE2 in a technical solution. It is always recommended to refer to the datasheet and consult with the manufacturer for detailed information.