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BCW60CT116
Product Overview
Category
The BCW60CT116 belongs to the category of high-frequency, low-noise NPN transistors.
Use
It is commonly used in applications requiring amplification and switching of high-frequency signals.
Characteristics
- Low noise figure
- High transition frequency
- High current gain
- Small package size
Package
The BCW60CT116 is available in a SOT-23 surface-mount package.
Essence
This transistor is essential for amplifying and switching high-frequency signals in various electronic circuits.
Packaging/Quantity
Typically, the BCW60CT116 is supplied in reels with a quantity of 3000 units per reel.
Specifications
- Collector-Base Voltage (VCBO): 45V
- Collector-Emitter Voltage (VCEO): 45V
- Emitter-Base Voltage (VEBO): 5V
- Continuous Collector Current (IC): 100mA
- Power Dissipation (Ptot): 225mW
- Transition Frequency (fT): 800MHz
Detailed Pin Configuration
- Base (B)
- Emitter (E)
- Collector (C)
Functional Features
- High-frequency signal amplification
- Low noise performance
- Suitable for RF applications
Advantages
- Small package size
- High transition frequency
- Low noise figure
Disadvantages
- Limited collector current capability
- Limited power dissipation
Working Principles
The BCW60CT116 operates based on the principles of bipolar junction transistors, providing high-frequency amplification by controlling the flow of current between its terminals.
Detailed Application Field Plans
The BCW60CT116 is widely used in: - Radio frequency (RF) amplifiers - Oscillators - Signal generators - High-frequency communication systems
Detailed and Complete Alternative Models
Some alternative models to the BCW60CT116 include: - BC847B - MMBT3904 - 2N3904 - BC548
In conclusion, the BCW60CT116 is a high-frequency, low-noise NPN transistor that finds extensive use in RF amplifiers, oscillators, and communication systems due to its small package size, high transition frequency, and low noise figure.
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What is BCW60CT116?
- BCW60CT116 is a high-frequency, low-noise NPN bipolar junction transistor (BJT) designed for use in RF amplifiers and oscillators.
What are the key specifications of BCW60CT116?
- The key specifications include a maximum collector current of 100mA, a power dissipation of 300mW, and a transition frequency of 6GHz.
In what applications can BCW60CT116 be used?
- BCW60CT116 is commonly used in RF amplifiers, oscillators, and other high-frequency applications where low noise and high gain are required.
What is the typical gain of BCW60CT116?
- The typical gain of BCW60CT116 is around 200 at a collector current of 10mA and a VCE of 5V.
What is the operating temperature range of BCW60CT116?
- BCW60CT116 is designed to operate within a temperature range of -55°C to 150°C.
Does BCW60CT116 require any special handling during assembly?
- BCW60CT116 should be handled with standard ESD precautions during assembly to prevent damage to the sensitive semiconductor components.
Can BCW60CT116 be used in low-power applications?
- Yes, BCW60CT116 can be used in low-power applications due to its low noise and high gain characteristics.
What are the recommended biasing conditions for BCW60CT116?
- The recommended biasing conditions include a collector current of 10mA and a VCE of 5V for optimal performance.
Is BCW60CT116 suitable for battery-powered devices?
- Yes, BCW60CT116's low power consumption and high gain make it suitable for use in battery-powered devices such as portable radios and wireless communication systems.
Are there any known reliability issues with BCW60CT116?
- BCW60CT116 is a reliable component when operated within its specified parameters, and there are no significant reliability issues associated with its normal use.