ON Semiconductor
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NTMFS4H013NFT1G
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NTMFS4H013NFT1G

Introduction

The NTMFS4H013NFT1G is a power MOSFET belonging to the category of electronic components. It is commonly used in various electronic devices and systems due to its unique characteristics and performance.

Basic Information Overview

  • Category: Electronic Components
  • Use: Power MOSFET for electronic circuits
  • Characteristics: High efficiency, low power dissipation, compact size
  • Package: Surface-mount DFN (Dual Flat No-Lead)
  • Essence: Efficient power management and control
  • Packaging/Quantity: Available in reels with varying quantities

Specifications

  • Voltage Rating: 40V
  • Current Rating: 120A
  • RDS(ON): 1.3mΩ
  • Package Type: DFN
  • Operating Temperature Range: -55°C to 150°C
  • Mounting Type: Surface Mount

Detailed Pin Configuration

The NTMFS4H013NFT1G features a standard pin configuration with clearly defined gate, drain, and source terminals. The pinout ensures easy integration into circuit designs and facilitates efficient heat dissipation.

Functional Features

  • Low RDS(ON) for minimal power loss
  • High current handling capability
  • Enhanced thermal performance
  • Fast switching speed for improved efficiency
  • Robust design for reliability in demanding applications

Advantages and Disadvantages

Advantages

  • High efficiency
  • Compact size
  • Low power dissipation
  • Reliable performance
  • Suitable for high-current applications

Disadvantages

  • Sensitive to static discharge
  • Requires careful handling during assembly

Working Principles

The NTMFS4H013NFT1G operates based on the principles of field-effect transistors, utilizing its low RDS(ON) and high current rating to efficiently control power flow within electronic circuits. By modulating the gate voltage, it regulates the current passing through the drain-source path, enabling precise power management.

Detailed Application Field Plans

The NTMFS4H013NFT1G finds extensive application in various fields, including: - Power supplies - Motor control systems - LED lighting - Battery management - Automotive electronics - Industrial automation

Detailed and Complete Alternative Models

Several alternative models with similar specifications and functionalities are available in the market, including: - AON6714 - IRF3709Z - SiRA99DP

In conclusion, the NTMFS4H013NFT1G power MOSFET offers high-performance characteristics and versatile applications, making it an essential component in modern electronic designs.

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Noem 10 veelgestelde vragen en antwoorden met betrekking tot de toepassing van NTMFS4H013NFT1G in technische oplossingen

  1. What is NTMFS4H013NFT1G?

    • NTMFS4H013NFT1G is a power MOSFET (metal-oxide-semiconductor field-effect transistor) designed for use in various power management applications.

  2. What are the key features of NTMFS4H013NFT1G?

    • The key features include low RDS(on), high efficiency, fast switching speed, and a small form factor, making it suitable for space-constrained designs.

  3. In what technical solutions can NTMFS4H013NFT1G be used?

    • NTMFS4H013NFT1G can be used in applications such as DC-DC converters, synchronous buck converters, motor control, and power supplies.

  4. What is the maximum voltage and current rating for NTMFS4H013NFT1G?

    • The maximum voltage rating is typically around 30V, and the current rating is usually several tens of amperes, depending on the specific variant.

  5. How does NTMFS4H013NFT1G contribute to system efficiency?

    • NTMFS4H013NFT1G's low RDS(on) and fast switching speed help minimize power losses and improve overall system efficiency.

  6. Are there any thermal considerations when using NTMFS4H013NFT1G?

    • Yes, proper thermal management is important to ensure that the MOSFET operates within its temperature limits for reliable performance.

  7. Can NTMFS4H013NFT1G be used in automotive applications?

    • Yes, NTMFS4H013NFT1G is often used in automotive power systems due to its high efficiency and compact size.

  8. What are the typical operating conditions for NTMFS4H013NFT1G?

    • The MOSFET can typically operate within a temperature range of -55°C to 150°C and is designed for use in various voltage and current ranges.

  9. Does NTMFS4H013NFT1G require any special gate driving considerations?

    • While not overly sensitive, proper gate driving techniques should be employed to ensure optimal performance and reliability.

  10. Where can I find detailed technical specifications and application notes for NTMFS4H013NFT1G?

    • Detailed technical specifications and application notes can be found in the product datasheet provided by the manufacturer or distributor, as well as in relevant technical resources and application guides.