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NTB082N65S3F

NTB082N65S3F

Product Overview

Category

The NTB082N65S3F belongs to the category of power MOSFETs.

Use

It is used for high-power switching applications in various electronic circuits and systems.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge
  • Enhanced ruggedness

Package

The NTB082N65S3F is typically available in a TO-263-3 package.

Essence

This MOSFET is essential for efficient power management and control in electronic devices and systems.

Packaging/Quantity

It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 650V
  • Continuous Drain Current (ID): 80A
  • On-Resistance (RDS(on)): 0.082Ω
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 110nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The NTB082N65S3F typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability for power applications
  • Low on-resistance for reduced power dissipation
  • Fast switching speed for improved efficiency
  • Low gate charge for enhanced control

Advantages

  • Suitable for high-power applications
  • Efficient power management
  • Reduced power loss
  • Enhanced system reliability

Disadvantages

  • Higher cost compared to lower-rated MOSFETs
  • May require additional circuitry for optimal performance in some applications

Working Principles

The NTB082N65S3F operates based on the principles of field-effect transistors, utilizing its gate-source voltage to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

The NTB082N65S3F is widely used in: - Switch-mode power supplies - Motor control systems - Renewable energy systems - Electric vehicle powertrains - Industrial automation equipment

Detailed and Complete Alternative Models

Some alternative models to the NTB082N65S3F include: - IRFP4568PBF - STW75N65M5 - FDPF33N25T

In conclusion, the NTB082N65S3F power MOSFET offers high-performance characteristics suitable for a wide range of high-power switching applications, making it an essential component in modern electronic systems.

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Noem 10 veelgestelde vragen en antwoorden met betrekking tot de toepassing van NTB082N65S3F in technische oplossingen

Sure, here are 10 common questions and answers related to the application of NTB082N65S3F in technical solutions:

  1. Q: What is the maximum drain-source voltage rating of NTB082N65S3F? A: The maximum drain-source voltage rating of NTB082N65S3F is 650V.

  2. Q: What is the continuous drain current rating of NTB082N65S3F? A: The continuous drain current rating of NTB082N65S3F is 82A.

  3. Q: What is the on-resistance of NTB082N65S3F? A: The on-resistance of NTB082N65S3F is typically 0.008 ohms.

  4. Q: Can NTB082N65S3F be used in high-power applications? A: Yes, NTB082N65S3F is suitable for high-power applications due to its high current and voltage ratings.

  5. Q: What type of package does NTB082N65S3F come in? A: NTB082N65S3F comes in a TO-263-3 package.

  6. Q: Is NTB082N65S3F suitable for switching applications? A: Yes, NTB082N65S3F is designed for use in high-speed switching applications.

  7. Q: What is the typical gate charge of NTB082N65S3F? A: The typical gate charge of NTB082N65S3F is 60nC.

  8. Q: Does NTB082N65S3F have built-in protection features? A: NTB082N65S3F has built-in overcurrent protection and thermal shutdown features.

  9. Q: What is the operating temperature range of NTB082N65S3F? A: NTB082N65S3F can operate within a temperature range of -55°C to 175°C.

  10. Q: Can NTB082N65S3F be used in automotive applications? A: Yes, NTB082N65S3F is suitable for use in automotive applications due to its rugged design and high power capabilities.