NMC27C16BQE150

Product Overview

Category: Integrated Circuit (IC)

Use: Non-volatile Memory

Characteristics: - High-density memory chip - Electrically erasable and programmable - Non-volatile storage of data - Reliable and durable

Package: 28-pin DIP (Dual In-line Package)

Essence: NMC27C16BQE150 is a non-volatile memory IC that provides high-density storage for electronic devices. It offers reliable and durable data storage capabilities.

Packaging/Quantity: The NMC27C16BQE150 is typically packaged in tubes or trays, with each package containing a single 28-pin DIP IC.

Specifications

• Memory Size: 16 kilobits (2 kilobytes)
• Organization: 2K x 8 bits
• Supply Voltage: 5V ±10%
• Access Time: 150 nanoseconds
• Operating Temperature Range: -40°C to +85°C
• Data Retention: More than 10 years
• Erase/Program Cycles: 1,000,000 cycles

Detailed Pin Configuration

The NMC27C16BQE150 has a total of 28 pins, which are assigned specific functions as follows:

1. A12 - Address Input
2. A7 - Address Input
3. A6 - Address Input
4. A5 - Address Input
5. A4 - Address Input
6. A3 - Address Input
7. A2 - Address Input
8. A1 - Address Input
9. A0 - Address Input
10. VSS - Ground
11. Q7 - Data Output
12. Q6 - Data Output
13. Q5 - Data Output
14. Q4 - Data Output
15. Q3 - Data Output
16. Q2 - Data Output
17. Q1 - Data Output
18. Q0 - Data Output
19. CE - Chip Enable
20. OE - Output Enable
21. WE - Write Enable
22. VCC - Supply Voltage
23. NC - No Connection
24. A8 - Address Input
25. A9 - Address Input
26. A11 - Address Input
27. A10 - Address Input
28. VPP - Programming Voltage

Functional Features

• Non-volatile storage: The NMC27C16BQE150 retains data even when power is removed.
• Electrically erasable and programmable: Allows for easy modification of stored data.
• High-density memory: Provides 16 kilobits of storage space.
• Fast access time: With a 150 nanosecond access time, data retrieval is efficient.

Advantages and Disadvantages

Advantages: - Reliable and durable non-volatile memory - Easy to erase and program - High-density storage capacity - Fast access time

Disadvantages: - Limited erase/program cycles (1,000,000 cycles) - Requires a programming voltage (VPP) for certain operations

Working Principles

The NMC27C16BQE150 utilizes electrically erasable and programmable read-only memory (EEPROM) technology. It stores data by trapping electrical charges within its memory cells. These charges can be erased or programmed using specific voltage levels applied to the appropriate pins.

Detailed Application Field Plans

The NMC27C16BQE150 is commonly used in various electronic devices that require non-volatile memory storage. Some typical application fields include: - Microcontrollers - Embedded systems - Industrial control systems - Automotive electronics - Consumer electronics

Detailed and Complete Alternative Models

1. NMC27C16BQE200: Similar to NMC27C16BQE150, but with a faster access time of 200 nanoseconds.
2. NMC27C32BQE150: Doubles the memory size to 32 kilobits (4 kilobytes) while maintaining the same characteristics and pin configuration as NMC27C16BQE150.
3. NMC27C64BQE150: Provides even higher density with 64 kilobits (8 kilobytes) of storage capacity.

These alternative models offer similar functionality and compatibility with the NMC27C16BQE150, providing options for different memory requirements.

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