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FQT1N80TF-WS
Product Category
The FQT1N80TF-WS belongs to the category of power MOSFETs.
Basic Information Overview
- Use: The FQT1N80TF-WS is used as a power switch in various electronic circuits and applications.
- Characteristics: It exhibits low on-state resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power conversion.
- Package: The FQT1N80TF-WS is typically available in a TO-220 package.
- Essence: Its essence lies in providing efficient power switching capabilities in electronic devices.
- Packaging/Quantity: It is commonly packaged individually and sold in quantities based on the requirements of the customer.
Specifications
- Voltage Rating: 800V
- Current Rating: 1A
- Package Type: TO-220
- On-State Resistance: 1.8Ω
- Gate Charge: 12nC
- Switching Speed: 50ns
Detailed Pin Configuration
The FQT1N80TF-WS typically has three pins: 1. Gate (G): Input pin for controlling the switching operation. 2. Drain (D): Output pin connected to the load or circuit being controlled. 3. Source (S): Ground reference for the MOSFET.
Functional Features
- High voltage capability
- Low on-state resistance
- Fast switching speed
- Low gate charge
Advantages and Disadvantages
Advantages: - Efficient power switching - Suitable for high-voltage applications - Low power dissipation
Disadvantages: - Sensitive to static electricity - Gate driver circuitry required for proper operation
Working Principles
The FQT1N80TF-WS operates based on the principle of field-effect transistors, where the application of a voltage at the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
The FQT1N80TF-WS finds extensive use in various applications such as: - Switched-mode power supplies - Motor control circuits - LED lighting systems - Solar inverters
Detailed and Complete Alternative Models
Some alternative models to the FQT1N80TF-WS include: - IRF840 - STP16NF06L - FQP27P06
This completes the English editing encyclopedia entry structure format for the FQT1N80TF-WS, covering its product category, basic information overview, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.
Noem 10 veelgestelde vragen en antwoorden met betrekking tot de toepassing van FQT1N80TF-WS in technische oplossingen
What is the FQT1N80TF-WS?
- The FQT1N80TF-WS is a power MOSFET designed for high-speed switching applications.
What are the key features of the FQT1N80TF-WS?
- The FQT1N80TF-WS features low on-resistance, fast switching speed, and high ruggedness.
What are the typical applications of the FQT1N80TF-WS?
- Typical applications include power supplies, motor control, lighting, and DC-DC converters.
What is the maximum drain-source voltage rating of the FQT1N80TF-WS?
- The maximum drain-source voltage rating is 800V.
What is the maximum continuous drain current of the FQT1N80TF-WS?
- The maximum continuous drain current is 1A.
What is the typical gate charge of the FQT1N80TF-WS?
- The typical gate charge is 8nC.
Does the FQT1N80TF-WS require a heat sink for operation?
- It depends on the application and the power dissipation requirements. In some cases, a heat sink may be necessary.
What is the operating temperature range of the FQT1N80TF-WS?
- The operating temperature range is typically -55°C to 150°C.
Is the FQT1N80TF-WS suitable for automotive applications?
- Yes, the FQT1N80TF-WS is suitable for automotive applications due to its ruggedness and reliability.
Where can I find detailed technical specifications and application notes for the FQT1N80TF-WS?
- Detailed technical specifications and application notes can be found in the product datasheet provided by the manufacturer.