FDD10N20LZTM

Introduction

The FDD10N20LZTM is a power MOSFET belonging to the category of electronic components. It is commonly used in various electronic circuits and devices due to its unique characteristics and performance.

Basic Information Overview

• Category: Power MOSFET
• Use: The FDD10N20LZTM is used as a switching device in electronic circuits, particularly in power supply applications.
• Characteristics: This MOSFET is known for its low on-state resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power conversion.
• Package: The FDD10N20LZTM is typically available in a TO-252 package, also known as DPAK, which provides good thermal performance and ease of mounting.
• Essence: Its essence lies in providing efficient power switching capabilities in electronic circuits.
• Packaging/Quantity: It is commonly sold in reels or tubes containing a specific quantity per package.

Specifications

• Voltage Rating: 200V
• Current Rating: 10A
• On-State Resistance: 0.19 ohms
• Gate Charge: 15nC
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The FDD10N20LZTM typically has three pins: Gate, Drain, and Source. The pinout configuration is as follows: - Pin 1 (Gate): Input for controlling the switching operation. - Pin 2 (Drain): Connection to the load or power supply. - Pin 3 (Source): Common connection for the MOSFET.

Functional Features

• High Efficiency: Due to its low on-state resistance and gate charge, the FDD10N20LZTM offers high efficiency in power conversion applications.
• Fast Switching Speed: It exhibits fast switching characteristics, enabling rapid on/off transitions in electronic circuits.
• Low Thermal Resistance: The TO-252 package design ensures efficient heat dissipation, contributing to reliable performance.

Advantages and Disadvantages

Advantages

• High efficiency in power conversion
• Fast switching speed
• Low on-state resistance

Disadvantages

• Sensitive to voltage spikes and transients
• Requires careful consideration of gate drive circuitry

Working Principles

The FDD10N20LZTM operates based on the principles of field-effect transistors, where the application of a voltage at the gate terminal controls the flow of current between the drain and source terminals. By modulating the gate voltage, the MOSFET can effectively switch high-power loads on and off.

Detailed Application Field Plans

The FDD10N20LZTM finds extensive use in various applications, including: - Switch-mode power supplies - Motor control circuits - LED lighting systems - Audio amplifiers - DC-DC converters

Detailed and Complete Alternative Models

Some alternative models to the FDD10N20LZTM include: - IRF1010EZPbF - STP16NF06FP - FQP30N06L

In conclusion, the FDD10N20LZTM is a versatile power MOSFET with excellent characteristics, making it a popular choice for power electronics applications.

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