CAV24C256YE-GT3

Product Overview

Category

The CAV24C256YE-GT3 belongs to the category of electrically erasable programmable read-only memory (EEPROM) chips.

Use

This product is commonly used for non-volatile data storage in various electronic devices, such as microcontrollers, computers, and consumer electronics.

Characteristics

• Non-volatile: The CAV24C256YE-GT3 retains stored data even when power is removed.
• High capacity: It has a storage capacity of 256 kilobits (32 kilobytes).
• Low power consumption: This chip operates on low power, making it suitable for battery-powered devices.
• Fast write and read speeds: The CAV24C256YE-GT3 offers efficient data transfer with high-speed read and write operations.
• Wide temperature range: It can operate reliably in temperatures ranging from -40°C to +85°C.

Package

The CAV24C256YE-GT3 is available in an industry-standard 8-pin SOIC (Small Outline Integrated Circuit) package.

Essence

This EEPROM chip provides reliable and non-volatile data storage capabilities for electronic devices, ensuring data integrity even during power loss or system shutdowns.

Packaging/Quantity

The CAV24C256YE-GT3 is typically packaged in reels containing 2,500 units per reel.

Specifications

• Memory Capacity: 256 kilobits (32 kilobytes)
• Interface: I2C (Inter-Integrated Circuit)
• Supply Voltage: 1.7V to 5.5V
• Operating Temperature Range: -40°C to +85°C
• Write Cycle Endurance: 1 million cycles
• Data Retention: 200 years

Detailed Pin Configuration

The CAV24C256YE-GT3 features the following pin configuration:

1. VCC: Supply voltage
2. SDA: Serial data input/output for I2C communication
3. SCL: Serial clock input for I2C communication
4. WP: Write protect pin (optional)
5. A0: Address bit 0
6. A1: Address bit 1
7. A2: Address bit 2
8. GND: Ground

Functional Features

• Random and sequential read modes
• Byte and page write modes
• Software write protection
• Hardware write protection (optional)
• Page write buffer for efficient data transfer
• Acknowledge polling and interrupt on completion of write cycle

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data integrity during power loss.
• High capacity allows for storing a significant amount of data.
• Low power consumption extends battery life in portable devices.
• Fast read and write speeds enable efficient data transfer.
• Wide temperature range makes it suitable for various environments.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Relatively higher cost per kilobyte compared to some alternatives.
• Limited endurance with a maximum of 1 million write cycles.

Working Principles

The CAV24C256YE-GT3 utilizes electrically erasable programmable read-only memory technology. It stores data by trapping electrical charges within its memory cells, which can be selectively erased and programmed using an electrical voltage. The stored data can be accessed and modified through the I2C interface.

Detailed Application Field Plans

The CAV24C256YE-GT3 finds applications in various fields, including: 1. Embedded systems: Used for firmware storage in microcontrollers and system-on-chip devices. 2. Industrial automation: Provides non-volatile storage for critical data in control systems. 3. Automotive electronics: Stores configuration data and calibration parameters in automotive modules. 4. Consumer electronics: Used for storing user settings, preferences, and firmware updates in devices like smart TVs and home appliances.

Detailed and Complete Alternative Models

1. AT24C256: EEPROM chip with similar specifications and I2C interface.
2. CAT24C256: Competing EEPROM chip offering comparable features and performance.
3. M24C256: Another alternative EEPROM chip with a wide operating temperature range.

These alternative models provide similar functionality and can be considered as substitutes for the CAV24C256YE-GT3.

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