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2SC3646S-P-TD-E

2SC3646S-P-TD-E

Product Category: Transistor

Basic Information Overview: - Category: Bipolar Junction Transistor (BJT) - Use: Amplification and switching in electronic circuits - Characteristics: High voltage, high current, low power consumption - Package: SOT-89 package - Essence: Small signal NPN transistor - Packaging/Quantity: Tape and reel, 3000 pieces per reel

Specifications: - Collector-Base Voltage (VCBO): 120V - Collector-Emitter Voltage (VCEO): 120V - Emitter-Base Voltage (VEBO): 5V - Collector Current (IC): 100mA - Power Dissipation (PD): 400mW - Transition Frequency (fT): 150MHz - Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration: - Pin 1 (Emitter) - Pin 2 (Base) - Pin 3 (Collector)

Functional Features: - High voltage capability - Low saturation voltage - Fast switching speed - Low noise

Advantages: - Suitable for high-speed switching applications - Compact SOT-89 package - Wide operating temperature range

Disadvantages: - Limited maximum collector current compared to some alternatives - Relatively lower transition frequency

Working Principles: The 2SC3646S-P-TD-E operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its terminals to amplify or switch electronic signals.

Detailed Application Field Plans: - Audio amplifiers - Switching circuits - Signal amplification in communication systems - Power management in portable devices

Detailed and Complete Alternative Models: - 2SC2712 - 2SC3356 - 2SC458 - 2SC536F

This comprehensive entry provides an in-depth understanding of the 2SC3646S-P-TD-E transistor, covering its category, basic information overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Noem 10 veelgestelde vragen en antwoorden met betrekking tot de toepassing van 2SC3646S-P-TD-E in technische oplossingen

  1. What is the maximum collector current of 2SC3646S-P-TD-E?

    • The maximum collector current of 2SC3646S-P-TD-E is 1.5A.

  2. What is the typical hFE (DC current gain) of 2SC3646S-P-TD-E?

    • The typical hFE of 2SC3646S-P-TD-E is 120-240.

  3. What is the maximum power dissipation of 2SC3646S-P-TD-E?

    • The maximum power dissipation of 2SC3646S-P-TD-E is 0.9W.

  4. What is the voltage rating for 2SC3646S-P-TD-E?

    • The voltage rating for 2SC3646S-P-TD-E is 50V.

  5. What are the typical applications for 2SC3646S-P-TD-E?

    • Typical applications for 2SC3646S-P-TD-E include audio amplification, switching circuits, and general purpose amplification.

  6. What is the operating temperature range of 2SC3646S-P-TD-E?

    • The operating temperature range of 2SC3646S-P-TD-E is -55°C to 150°C.

  7. Is 2SC3646S-P-TD-E RoHS compliant?

    • Yes, 2SC3646S-P-TD-E is RoHS compliant.

  8. What is the package type of 2SC3646S-P-TD-E?

    • 2SC3646S-P-TD-E comes in a TO-126 package.

  9. Does 2SC3646S-P-TD-E require external heat sinking?

    • It is recommended to use external heat sinking for 2SC3646S-P-TD-E in high-power applications.

  10. What are the key differences between 2SC3646S-P-TD-E and its previous versions?

    • The main differences include improved thermal characteristics and higher collector current capability in 2SC3646S-P-TD-E compared to its previous versions.