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2N7002ET3G
Product Category: Semiconductor - MOSFET
Basic Information Overview: - Category: 2N7002ET3G belongs to the category of small-signal MOSFETs. - Use: It is commonly used as a switch in electronic circuits, especially in low-power applications. - Characteristics: This MOSFET features low on-state resistance, fast switching speed, and low gate threshold voltage. - Package: The 2N7002ET3G is typically available in a SOT-23 package. - Essence: Its essence lies in providing efficient and reliable switching capabilities in various electronic circuits. - Packaging/Quantity: It is often supplied in reels or tubes containing a specific quantity, such as 3000 units per reel.
Specifications: - Drain-Source Voltage (VDS): 60V - Continuous Drain Current (ID): 115mA - On-State Resistance (RDS(on)): 5 Ohms - Gate-Source Threshold Voltage (VGS(th)): 1-2.5V - Power Dissipation (PD): 200mW
Detailed Pin Configuration: The 2N7002ET3G typically has three pins: Gate (G), Drain (D), and Source (S).
Functional Features: - Fast switching speed - Low gate threshold voltage - Low on-state resistance
Advantages and Disadvantages: - Advantages: - Efficient switching performance - Small form factor - Low power consumption - Disadvantages: - Limited maximum voltage and current ratings - Sensitivity to static electricity
Working Principles: When a sufficient voltage is applied to the gate terminal, the MOSFET allows current to flow between the drain and source terminals, effectively acting as a switch in the circuit.
Detailed Application Field Plans: - Low-Power Circuits: Used as a switch in battery-powered devices, sensor circuits, and other low-power applications. - Signal Amplification: Employed in audio amplifiers and signal processing circuits. - Voltage Regulation: Utilized in voltage regulation circuits for controlling power delivery.
Detailed and Complete Alternative Models: - BS170: Similar small-signal MOSFET with comparable specifications. - IRLML2502: MOSFET with low threshold voltage and high current capability.
This comprehensive entry provides an in-depth understanding of the 2N7002ET3G MOSFET, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.
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Noem 10 veelgestelde vragen en antwoorden met betrekking tot de toepassing van 2N7002ET3G in technische oplossingen
Sure, here are 10 common questions and answers related to the application of 2N7002ET3G in technical solutions:
What is the maximum drain-source voltage rating of 2N7002ET3G?
- The maximum drain-source voltage rating of 2N7002ET3G is 60V.
What is the continuous drain current rating of 2N7002ET3G?
- The continuous drain current rating of 2N7002ET3G is 310mA.
Can 2N7002ET3G be used for low-power switching applications?
- Yes, 2N7002ET3G is suitable for low-power switching applications due to its low threshold voltage and low on-resistance.
What is the typical threshold voltage of 2N7002ET3G?
- The typical threshold voltage of 2N7002ET3G is around 2.1V.
Is 2N7002ET3G suitable for level shifting applications?
- Yes, 2N7002ET3G can be used for level shifting applications due to its compatibility with different logic levels.
What is the maximum junction temperature of 2N7002ET3G?
- The maximum junction temperature of 2N7002ET3G is 150°C.
Can 2N7002ET3G be used in battery-powered applications?
- Yes, 2N7002ET3G is suitable for battery-powered applications due to its low threshold voltage and low power consumption.
Does 2N7002ET3G have ESD protection?
- Yes, 2N7002ET3G is designed with ESD protection to ensure reliability in various applications.
What are the typical input and output capacitances of 2N7002ET3G?
- The typical input capacitance is 20pF, and the typical output capacitance is 35pF for 2N7002ET3G.
Is 2N7002ET3G RoHS compliant?
- Yes, 2N7002ET3G is RoHS compliant, making it suitable for environmentally friendly designs and applications.