JAN1N6116

Product Overview

Category: Semiconductor Diode
Use: Rectification and voltage regulation
Characteristics: High reliability, low forward voltage drop, fast switching speed
Package: DO-41
Essence: Silicon rectifier diode
Packaging/Quantity: Bulk packaging, 100 pieces per pack

Specifications

Forward Voltage Drop: 0.7V
Reverse Voltage: 200V
Forward Current: 1A
Reverse Recovery Time: 4ns

Detailed Pin Configuration

The JAN1N6116 is a two-terminal device with an anode and a cathode. In the DO-41 package, the anode is typically denoted by a band at one end of the diode.

Functional Features

High reliability and ruggedness
Fast switching speed
Low forward voltage drop

Advantages and Disadvantages

Advantages

High reliability
Low forward voltage drop
Fast switching speed

Disadvantages

Limited reverse voltage capability
Relatively high reverse recovery time

Working Principles

The JAN1N6116 operates on the principle of semiconductor junction behavior. When forward biased, it allows current to flow with a low voltage drop. When reverse biased, it blocks the flow of current up to its rated reverse voltage.

Detailed Application Field Plans

The JAN1N6116 is commonly used in power supply circuits, voltage regulators, and rectifier applications where low forward voltage drop and fast switching speed are essential. It finds extensive use in electronic equipment and power systems.

Detailed and Complete Alternative Models

1N4001: Similar characteristics but lower reverse voltage rating
1N5819: Schottky diode alternative with faster switching speed

This comprehensive entry provides detailed information about the JAN1N6116 semiconductor diode, including its product category, basic overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.

Noem 10 veelgestelde vragen en antwoorden met betrekking tot de toepassing van JAN1N6116 in technische oplossingen

What is JAN1N6116?
- JAN1N6116 is a high-reliability, military-grade silicon power rectifier diode.
What are the key specifications of JAN1N6116?
- The key specifications include a maximum repetitive peak reverse voltage of 200V, average forward current of 6A, and a forward voltage drop of 1.0V at 3A.
In what applications can JAN1N6116 be used?
- JAN1N6116 is commonly used in aerospace, defense, and other high-reliability applications where ruggedness and reliability are critical.
What are the advantages of using JAN1N6116 in technical solutions?
- JAN1N6116 offers high reliability, low forward voltage drop, and excellent surge capability, making it suitable for demanding environments.
Can JAN1N6116 withstand high temperature environments?
- Yes, JAN1N6116 is designed to operate reliably in high-temperature environments typically encountered in aerospace and defense applications.
What is the operating temperature range of JAN1N6116?
- The operating temperature range of JAN1N6116 is typically -65°C to +175°C.
Is JAN1N6116 suitable for high-frequency applications?
- While JAN1N6116 is not specifically designed for high-frequency applications, it can still be used in certain moderate frequency applications.
Are there any specific handling considerations for JAN1N6116?
- It is important to follow proper ESD (electrostatic discharge) precautions when handling JAN1N6116 to prevent damage to the device.
Can JAN1N6116 be used in parallel or series configurations?
- Yes, JAN1N6116 can be used in parallel or series configurations to achieve higher current or voltage ratings, respectively.
Where can I find detailed technical information about JAN1N6116?
- Detailed technical information about JAN1N6116 can be found in the datasheet provided by the manufacturer or distributor.