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2N5686

2N5686 Transistor

Product Overview

The 2N5686 is a silicon NPN power transistor designed for general-purpose amplifier and switching applications. It falls under the category of discrete semiconductor devices and is commonly used in electronic circuits where moderate power amplification or switching is required.

Basic Information

  • Category: Discrete Semiconductor Device
  • Use: Amplification and Switching
  • Characteristics: High voltage, moderate power handling capability
  • Package: TO-39 metal can package
  • Essence: Power transistor for general-purpose applications
  • Packaging/Quantity: Typically available in bulk packaging with varying quantities

Specifications

  • Maximum Collector-Emitter Voltage (VCEO): 60V
  • Maximum Collector-Base Voltage (VCBO): 80V
  • Maximum Collector Current (IC): 4A
  • Power Dissipation (Pd): 36W
  • Transition Frequency (ft): 2 MHz
  • Operating Temperature Range: -65°C to 200°C

Detailed Pin Configuration

The 2N5686 transistor typically features three leads: 1. Collector (C): Connected to the positive supply voltage in most circuit configurations. 2. Base (B): Controls the transistor's conductivity when a small current is applied. 3. Emitter (E): Connected to the ground or common reference point in most circuit configurations.

Functional Features

  • High voltage capability allows for use in various power applications.
  • Moderate power handling makes it suitable for general-purpose amplification and switching tasks.
  • Robust construction ensures reliability in diverse operating conditions.

Advantages and Disadvantages

Advantages

  • Versatile application in both amplification and switching circuits.
  • Suitable for moderate power requirements.
  • Robust construction enhances durability.

Disadvantages

  • Limited maximum power handling compared to higher-power transistors.
  • May not be suitable for high-frequency applications due to moderate transition frequency.

Working Principles

The 2N5686 operates based on the principles of bipolar junction transistors (BJTs). When a small current is applied to the base terminal, it controls the larger current flow between the collector and emitter terminals. This property enables the transistor to amplify signals or act as a switch in electronic circuits.

Detailed Application Field Plans

The 2N5686 transistor finds application in a wide range of electronic systems, including: - Audio amplifiers - Power supply circuits - Motor control circuits - Lighting control systems - General-purpose switching applications

Detailed and Complete Alternative Models

  • 2N5685: Similar characteristics with slightly lower power handling capability.
  • 2N5687: Higher power handling capability with similar voltage ratings.
  • TIP31: Complementary NPN power transistor with different package style.

In conclusion, the 2N5686 transistor serves as a versatile component in electronic circuits, offering moderate power handling and high voltage capability. Its application spans across various fields, making it a valuable choice for amplification and switching tasks in diverse electronic systems.

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Noem 10 veelgestelde vragen en antwoorden met betrekking tot de toepassing van 2N5686 in technische oplossingen

  1. What is the 2N5686 transistor used for?

    • The 2N5686 is a high-power NPN bipolar junction transistor commonly used in power amplifier and switching applications.
  2. What are the key specifications of the 2N5686 transistor?

    • The 2N5686 has a maximum collector current of 30A, a maximum collector-emitter voltage of 80V, and a power dissipation of 300W.
  3. How can the 2N5686 be used in power amplifier circuits?

    • The 2N5686 can be used as the output transistor in audio amplifiers, RF amplifiers, and other high-power applications due to its high current and voltage ratings.
  4. What are some typical applications of the 2N5686 in switching circuits?

    • The 2N5686 can be used in power supply switching circuits, motor control, and other high-current switching applications.
  5. What are the recommended operating conditions for the 2N5686?

    • The 2N5686 should be operated within its specified temperature range of -65°C to 200°C and with appropriate heatsinking for high-power applications.
  6. Are there any specific considerations for driving the 2N5686 in amplifier circuits?

    • It's important to provide adequate base drive current and voltage to ensure proper saturation and switching characteristics in amplifier circuits.
  7. Can the 2N5686 be used in automotive applications?

    • Yes, the 2N5686's high-power capabilities make it suitable for use in automotive electronic systems such as ignition systems and motor control.
  8. What are the common failure modes of the 2N5686 transistor?

    • Common failure modes include thermal runaway due to inadequate heatsinking, overvoltage or overcurrent conditions, and excessive junction temperatures.
  9. Are there any recommended complementary transistors to use with the 2N5686?

    • Complementary PNP transistors such as the 2N5685 or TIP3055 can be used in conjunction with the 2N5686 in push-pull amplifier configurations.
  10. Where can I find detailed application notes and reference designs for the 2N5686?

    • Detailed application notes and reference designs for the 2N5686 can be found in the manufacturer's datasheet, as well as in technical literature from semiconductor component suppliers and electronics design resources.