MT53D768M32D4BD-053 WT ES:C

Basic Information Overview

• Category: Memory Module
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • High capacity
  • Fast data transfer rate
  • Low power consumption
• Package: Integrated circuit module
• Essence: Non-volatile memory storage
• Packaging/Quantity: Single unit per package

Specifications

• Model: MT53D768M32D4BD-053 WT ES:C
• Capacity: 768 megabytes (MB)
• Type: DDR4 SDRAM
• Speed: 3200 megabits per second (Mbps)
• Voltage: 1.2 volts (V)
• Form Factor: 288-pin DIMM
• Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The MT53D768M32D4BD-053 WT ES:C memory module has a total of 288 pins arranged in a specific configuration. The pinout diagram is as follows:

Functional Features

• High-speed data transfer: The DDR4 SDRAM technology allows for fast and efficient data transfer between the memory module and the device.
• Low power consumption: The module is designed to operate at low voltage, reducing power consumption and extending battery life in portable devices.
• Error correction: The memory module incorporates error correction techniques to ensure data integrity and reliability.
• Compatibility: The module is compatible with various electronic devices that support DDR4 memory.

Advantages and Disadvantages

Advantages: - Large storage capacity - High-speed data transfer - Low power consumption - Error correction capabilities

Disadvantages: - Relatively higher cost compared to lower-capacity memory modules - Requires compatible devices with DDR4 memory support

Working Principles

The MT53D768M32D4BD-053 WT ES:C memory module stores data in a non-volatile manner using DDR4 SDRAM technology. When the device sends a read or write command, the module retrieves or stores the data respectively. The high-speed data transfer is achieved through the synchronous operation of the memory module and the device's memory controller.

Detailed Application Field Plans

The MT53D768M32D4BD-053 WT ES:C memory module finds applications in various electronic devices that require high-capacity and fast data storage. Some potential application fields include: - Personal computers - Laptops and notebooks - Servers and data centers - Gaming consoles - Networking equipment

Detailed and Complete Alternative Models

1. MT53B256M32D2NP-062 WT ES:A

   • Capacity: 256 megabytes (MB)
   • Type: DDR2 SDRAM
   • Speed: 800 megabits per second (Mbps)
   • Voltage: 1.8 volts (V)
   • Form Factor: 240-pin DIMM

2. MT53E512M32D2NP-053 WT ES:B

   • Capacity: 512 megabytes (MB)
   • Type: DDR3 SDRAM
   • Speed: 1600 megabits per second (Mbps)
   • Voltage: 1.5 volts (V)
   • Form Factor: 204-pin SODIMM

3. MT53F1024M32D4NP-053 WT ES:C

   • Capacity: 1024 megabytes (MB)
   • Type: DDR4 SDRAM
   • Speed: 3200 megabits per second (Mbps)
   • Voltage: 1.2 volts (V)
   • Form Factor: 288-pin DIMM

These alternative models offer different capacities, types, speeds, voltages, and form factors to cater to various device requirements.

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