MT29F2G16ABAEAWP-AIT:E

Product Overview

Category

MT29F2G16ABAEAWP-AIT:E belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F2G16ABAEAWP-AIT:E offers a storage capacity of 2 gigabits (2 Gb).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory ensures reliable performance with its advanced error correction techniques.
• Low power consumption: It is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: The MT29F2G16ABAEAWP-AIT:E comes in a compact package, enabling easy integration into various electronic devices.

Packaging/Quantity

The MT29F2G16ABAEAWP-AIT:E is typically packaged in a surface-mount technology (SMT) package. The exact quantity per package may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 2 Gb
• Interface: NAND
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: SMT

Detailed Pin Configuration

The MT29F2G16ABAEAWP-AIT:E has a specific pin configuration that facilitates its integration into electronic devices. The detailed pin configuration is as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. A0-A11: Address inputs
4. CLE: Command latch enable
5. ALE: Address latch enable
6. CE: Chip enable
7. RE: Read enable
8. WE: Write enable
9. R/B: Ready/busy status
10. DQ0-DQ15: Data input/output

Functional Features

The MT29F2G16ABAEAWP-AIT:E offers several functional features that enhance its performance and usability:

• Page Program Operation: It supports fast page program operations, allowing for efficient data storage.
• Block Erase Operation: The NAND flash memory enables block erase operations, facilitating the deletion of large amounts of data.
• Random Access: It provides random access to stored data, enabling quick retrieval and modification.
• Wear-Leveling: The MT29F2G16ABAEAWP-AIT:E incorporates wear-leveling algorithms to distribute write operations evenly across memory blocks, prolonging its lifespan.
• Error Correction: Advanced error correction techniques are implemented to ensure data integrity and reliability.

Advantages and Disadvantages

Advantages

• High storage capacity allows for ample data storage.
• Fast data transfer rate enhances overall device performance.
• Low power consumption prolongs battery life in portable devices.
• Compact package facilitates integration into various electronic devices.
• Reliable performance with advanced error correction techniques.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of write/erase cycles, which may affect its lifespan.
• Relatively higher cost compared to other types of memory.

Working Principles

The MT29F2G16ABAEAWP-AIT:E operates based on the principles of NAND flash memory technology. It utilizes a grid of memory cells, where each cell stores multiple bits of data. These cells are organized into pages and blocks, allowing for efficient read, write, and erase operations. When data is written, it is stored by applying electrical charges to specific memory cells. Reading data involves detecting the presence or absence of charges in the cells. Erasing data involves removing all charges from a block, making it ready for new data storage.

Detailed Application Field Plans

The MT29F2G16ABAEAWP-AIT:E finds applications in various electronic devices and industries, including:

1. Smartphones and Tablets: Used for storing operating systems, applications, and user data.
2. Digital Cameras: Enables high-capacity storage for photos and videos.
3. Solid-State Drives (SSDs): Provides non-volatile storage for computers and servers.
4. Automotive Electronics: Used for data storage in infotainment systems, navigation systems, and instrument clusters.
5. Industrial Control Systems: Enables reliable and durable data storage in automation and control applications.

Detailed and Complete Alternative Models

• MT29F2G08ABAEAWP-AIT:E
• MT29F4G16ABAEAWP-AIT:E
• MT29F8G16ABAEAWP-AIT:E
• MT29F16G16ABAEAWP-AIT:E

These alternative models offer different storage capacities while maintaining similar characteristics and functionality