AT93C46Y1-10YI-2.7

Product Overview

Category

AT93C46Y1-10YI-2.7 belongs to the category of electrically erasable programmable read-only memory (EEPROM) chips.

Use

This product is commonly used for non-volatile storage in various electronic devices, such as microcontrollers, automotive systems, and consumer electronics.

Characteristics

• Non-volatile: Retains data even when power is removed.
• Electrically erasable: Allows for easy modification of stored data.
• Programmable: Can be written and rewritten multiple times.
• Small form factor: Compact size suitable for integration into various electronic devices.

Package

AT93C46Y1-10YI-2.7 is available in a 8-pin DIP (Dual Inline Package) or SOIC (Small Outline Integrated Circuit) package.

Essence

The essence of AT93C46Y1-10YI-2.7 lies in its ability to provide reliable and non-volatile storage for electronic devices, enabling them to retain important data even during power cycles.

Packaging/Quantity

This product is typically packaged in reels or tubes, with quantities varying based on customer requirements.

Specifications

• Operating voltage: 2.7V to 5.5V
• Memory capacity: 1 kilobit (128 bytes)
• Organization: 64 words x 16 bits
• Data retention: Up to 100 years
• Write endurance: 1 million write cycles
• Operating temperature range: -40°C to +85°C

Detailed Pin Configuration

1. Chip Enable (CE)
2. Serial Data Input (DI)
3. Serial Data Output (DO)
4. Serial Clock (SK)
5. Write Enable (WE)
6. VCC (Power supply)
7. Ground (GND)
8. Not Connected (NC)

Functional Features

• Byte-level read and write operations
• Sequential read operation with auto-increment address
• Hardware and software write protection options
• Self-timed programming cycle
• Power-saving standby mode

Advantages and Disadvantages

Advantages

• Compact size and low power consumption
• High data retention and write endurance
• Easy integration into various electronic devices
• Flexible write protection options

Disadvantages

• Limited memory capacity compared to other EEPROM chips
• Relatively slower write speed compared to some alternatives

Working Principles

AT93C46Y1-10YI-2.7 utilizes a floating-gate transistor structure to store and retrieve data. The stored charge in the floating gate determines the logic state of each memory cell. When writing data, an electric field is applied to the floating gate, allowing electrons to tunnel through the insulating layer and modify the charge. During read operations, the charge on the floating gate is sensed to determine the stored data.

Detailed Application Field Plans

AT93C46Y1-10YI-2.7 finds applications in various fields, including: - Microcontroller-based systems - Automotive electronics (e.g., engine control units, infotainment systems) - Consumer electronics (e.g., smart TVs, set-top boxes) - Industrial automation - Medical devices

Detailed and Complete Alternative Models

Some alternative models to AT93C46Y1-10YI-2.7 include: - AT93C66Y1-10YI-2.7: 2 kilobit EEPROM with higher memory capacity - AT93C86Y1-10YI-2.7: 16 kilobit EEPROM with even higher memory capacity - AT25M02-10SI-2.7: 2 megabit EEPROM with larger storage capacity

These alternative models offer different memory capacities to suit specific application requirements.

In conclusion, AT93C46Y1-10YI-2.7 is a compact and reliable EEPROM chip that provides non-volatile storage for various electronic devices. With its small form factor, flexible write protection options, and high data retention, it serves as an essential component in microcontroller-based systems, automotive electronics, consumer electronics, and more. While it may have limitations in terms of memory capacity and write speed, alternative models are available to cater to different application needs.