AT49F512-70VU

Product Overview

Category

AT49F512-70VU belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High storage capacity: 512 kilobits (64 kilobytes).
• Fast access time: Operates at a speed of 70 nanoseconds.
• Low power consumption: Efficient energy usage.
• Reliable: Durable and resistant to environmental factors.

Package

AT49F512-70VU is available in a standard 32-pin plastic dual in-line package (PDIP).

Essence

The essence of AT49F512-70VU lies in its ability to provide reliable and non-volatile memory storage for electronic devices.

Packaging/Quantity

This product is typically packaged in reels or tubes, with a quantity of 25 units per reel/tube.

Specifications

• Memory Type: Flash EEPROM
• Organization: 64K x 8 bits
• Supply Voltage: 4.5V - 5.5V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 20 years
• Erase/Write Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VCC
13. OE#
14. CE#
15. WE#
16. I/O0
17. I/O1
18. I/O2
19. I/O3
20. I/O4
21. I/O5
22. I/O6
23. I/O7
24. GND
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC

Functional Features

• Easy integration: Compatible with various microcontrollers and systems.
• High-speed operation: Enables fast data access and transfer.
• Flexible programming options: Supports both byte and word programming.
• Sector erase capability: Allows selective erasure of memory sectors.
• Hardware and software protection: Provides security features to prevent unauthorized access.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• Fast access time enhances system performance.
• Low power consumption prolongs battery life.
• Durable and reliable for long-term use.
• Offers flexible programming options.

Disadvantages

• Limited storage capacity compared to other memory devices.
• Erase/write cycle endurance may be a constraint in certain applications.
• Relatively higher cost per unit compared to some alternatives.

Working Principles

AT49F512-70VU utilizes flash EEPROM technology, which combines the benefits of both EPROM and EEPROM. It stores data using floating-gate transistors that can retain charge even when not powered. The memory cells are organized into sectors, allowing for selective erasure. Data can be written or read by applying appropriate voltage levels to the control pins.

Detailed Application Field Plans

AT49F512-70VU finds application in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

1. AT49F1024-70TU: 1 megabit (128 kilobytes) flash EEPROM with similar specifications.
2. AT45DB161E-SHN-T: 16 megabit (2 megabytes) flash memory with enhanced features.
3. SST39SF010A-70-4C-PHE: 1 megabit (128 kilobytes) flash memory with extended temperature range.

These alternative models offer different storage capacities and additional features, catering to diverse application requirements.

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