AT49F512-55VU

Product Overview

Category

AT49F512-55VU belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: The AT49F512-55VU retains data even when power is removed.
• High capacity: It has a storage capacity of 512 kilobits (64 kilobytes).
• Fast access time: The device offers a fast access time of 55 nanoseconds.
• Low power consumption: It operates at low power levels, making it suitable for battery-powered devices.

Package

The AT49F512-55VU is available in a standard 32-pin plastic dual in-line package (PDIP).

Essence

The essence of this product lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

The AT49F512-55VU is typically packaged in reels or tubes, with a quantity of 1000 units per package.

Specifications

• Memory Type: Flash EEPROM
• Organization: 64K x 8 bits
• Supply Voltage: 5V ±10%
• Access Time: 55 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycle Endurance: 10,000 cycles
• Data Retention: 20 years

Pin Configuration

The AT49F512-55VU has a total of 32 pins. The pin configuration is as follows:

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VPP
13. WE#
14. OE#
15. CE#
16. BYTE#
17. NC
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. VCC
27. GND
28. A8
29. A9
30. A11
31. A13
32. A15

Functional Features

• Easy interface: The AT49F512-55VU supports a standard parallel interface, making it compatible with a wide range of systems.
• High-speed operation: With an access time of 55 ns, this device allows for fast read and write operations.
• Sector erase capability: The memory can be erased in sectors, allowing for efficient data management.
• Write protection: The device features a hardware write protection mechanism to prevent accidental data modification.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• High capacity allows for storing large amounts of information.
• Fast access time enables quick data retrieval.
• Low power consumption makes it suitable for battery-powered devices.

Disadvantages

• Limited erase/program cycle endurance may require careful management in certain applications.
• The package size may not be suitable for space-constrained designs.

Working Principles

The AT49F512-55VU is based on flash EEPROM technology. It utilizes floating-gate transistors to store and retrieve digital information. When data is written, charge is trapped in the floating gate, altering the transistor's behavior. This charge can be removed during the erase process, allowing the transistor to return to its original state. The stored information can be accessed by applying appropriate voltages to the device's pins.

Detailed Application Field Plans

The AT49F512-55VU is widely used in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive applications - Industrial control systems - Communication devices

Alternative Models

For those seeking alternative options, the following models offer similar functionality and specifications to the AT49F512-55VU: - AT49F512-70TU - AT49F512-90TU - AT49F512-12TC

These models can be considered as suitable replacements depending on specific requirements.

In conclusion, the AT49F512-55VU is a non-volatile memory device that provides reliable storage for electronic systems. With its high capacity, fast access time, and low power consumption, it offers several advantages for various applications. However, careful management of erase/program cycles may be necessary, and the package size should be considered in space-constrained designs.