AT49F040-90JI

Product Overview

Category

AT49F040-90JI belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High capacity: Offers a storage capacity of 4 megabits (512 kilobytes).
• Fast access time: Provides a fast access time of 90 nanoseconds.
• Low power consumption: Operates on low power, making it suitable for battery-powered devices.

Package

AT49F040-90JI comes in a JEDEC-standard PLCC-32 package.

Essence

The essence of AT49F040-90JI lies in its ability to provide reliable and non-volatile data storage in various electronic applications.

Packaging/Quantity

This product is typically packaged in reels or tubes, with a quantity of 1000 units per reel/tube.

Specifications

• Memory Type: Flash EEPROM
• Organization: 512K x 8 bits
• Supply Voltage: 5V ±10%
• Access Time: 90 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycle Endurance: 10,000 cycles
• Data Retention: 20 years

Detailed Pin Configuration

The AT49F040-90JI has a total of 32 pins. The pin configuration is as follows:

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VPP
13. BYTE#
14. OE#
15. CE#
16. WE#
17. I/O0
18. I/O1
19. I/O2
20. I/O3
21. I/O4
22. I/O5
23. I/O6
24. I/O7
25. NC
26. GND
27. VCC
28. A8
29. A9
30. A11
31. A13
32. A15

Functional Features

• Easy to interface with various microcontrollers and systems.
• Supports both read and write operations.
• Provides sector erase and chip erase functions.
• Offers protection against accidental write or erase operations through hardware features.

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity allows for storing large amounts of data.
• Fast access time enables quick retrieval of information.
• Low power consumption makes it suitable for battery-powered devices.

Disadvantages

• Limited endurance with a maximum of 10,000 erase/program cycles.
• Relatively higher cost compared to other types of memory.
• Requires careful handling to avoid static discharge.

Working Principles

AT49F040-90JI utilizes flash EEPROM technology to store data. It consists of a grid of memory cells that can be electrically programmed and erased. The memory cells are organized in a matrix, with each cell capable of storing one bit of information. Data is written by applying appropriate voltage levels to the control pins, and erased by applying high voltage to specific pins. The stored data can be accessed by reading the voltage levels on the I/O pins.

Detailed Application Field Plans

AT49F040-90JI finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

Some alternative models to AT49F040-90JI that offer similar functionality and characteristics include: - AT49F040-12PI - AT49F040-15TI - AT49F040-20JI - AT49F040-25CI

These models are compatible with the same pin configuration and provide comparable performance.

In conclusion, AT49F040-90JI is a non-volatile memory device with a high storage capacity and fast access time. It offers reliable data storage for various electronic applications. While it has advantages such as non-volatility and low power consumption, it also has limitations in terms of endurance and cost. Nonetheless, it serves as a crucial component in many electronic systems, providing efficient data storage and retrieval capabilities.