AT49F040-90JC

Product Overview

Category

AT49F040-90JC belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High capacity: Offers a storage capacity of 4 megabits (512 kilobytes).
• Fast access time: Provides a quick response time of 90 nanoseconds.
• Low power consumption: Operates efficiently with low power requirements.

Package

AT49F040-90JC is available in a 32-pin PLCC (Plastic Leaded Chip Carrier) package.

Essence

The essence of AT49F040-90JC lies in its ability to provide reliable and high-capacity non-volatile memory storage for various electronic applications.

Packaging/Quantity

This product is typically packaged in reels or tubes, with a quantity of 25 pieces per tube.

Specifications

• Memory Type: Flash EEPROM
• Organization: 512K x 8 bits
• Supply Voltage: 5V ±10%
• Access Time: 90 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VPP
13. OE#
14. CE#
15. WE#
16. NC
17. DQ0
18. DQ1
19. DQ2
20. DQ3
21. DQ4
22. DQ5
23. DQ6
24. DQ7
25. VCC
26. GND
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC

Functional Features

• Easy integration: Compatible with a wide range of microcontrollers and systems.
• High-speed operation: Enables fast read and write operations for efficient data access.
• Sector erase capability: Allows selective erasure of specific memory sectors.
• Data protection: Supports hardware and software data protection mechanisms.
• Low power consumption: Optimized power management for energy-efficient operation.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity suitable for various applications.
• Fast access time enhances system performance.
• Low power consumption prolongs battery life.
• Sector erase capability provides flexibility in data management.

Disadvantages

• Limited endurance compared to other non-volatile memory technologies.
• Relatively higher cost per bit compared to some alternative memory options.

Working Principles

AT49F040-90JC utilizes flash EEPROM technology, which combines the benefits of both electrically erasable programmable read-only memory (EEPROM) and flash memory. It stores data by trapping electrons in a floating gate, allowing the information to be retained even when power is removed. The memory cells are organized into sectors, enabling selective erasure and programming of specific sections of the memory.

Detailed Application Field Plans

AT49F040-90JC finds applications in various electronic devices and systems, including: 1. Embedded systems 2. Consumer electronics 3. Automotive electronics 4. Industrial control systems 5. Communication devices

Detailed and Complete Alternative Models

1. AT49F002N-90JC
2. AT49F080-90JC
3. AT49F001NT-90JC
4. AT49F1024A-90JC
5. AT49F040-70JC

These alternative models offer similar functionality and characteristics to AT49F040-90JC, providing options for different memory capacities and access times.

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