AT49F002NT-12JC

Product Overview

Category

AT49F002NT-12JC belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High storage capacity: The AT49F002NT-12JC has a storage capacity of 2 megabits (256 kilobytes).
• Fast access time: It operates at a speed of 120 nanoseconds, allowing for quick data retrieval.
• Low power consumption: The device is designed to consume minimal power during operation.

Package

The AT49F002NT-12JC is available in a 32-pin PLCC (Plastic Leaded Chip Carrier) package.

Essence

This product is an essential component in various electronic devices that require non-volatile memory for data storage.

Packaging/Quantity

The AT49F002NT-12JC is typically packaged in reels or tubes, with a quantity of 100 units per package.

Specifications

• Memory Type: Flash EEPROM
• Organization: 256K x 8 bits
• Supply Voltage: 5V
• Access Time: 120 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

The AT49F002NT-12JC has a total of 32 pins. Here is the detailed pin configuration:

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VPP
13. WE#
14. OE#
15. CE#
16. BYTE#
17. NC
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. VCC
27. GND
28. RP#
29. RY/BY#
30. RESET#
31. A15
32. A13

Functional Features

• Easy integration: The AT49F002NT-12JC can be easily integrated into existing electronic systems.
• High reliability: It offers reliable data storage and retrieval, ensuring the integrity of stored information.
• Versatile interface: The device supports a standard parallel interface, making it compatible with a wide range of systems.
• Flexible programming options: The AT49F002NT-12JC supports both byte and sector-level programming, providing flexibility in data storage.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity allows for storing large amounts of data.
• Fast access time enables quick data retrieval.
• Low power consumption reduces energy requirements.

Disadvantages

• Limited erase/program cycle endurance compared to some other non-volatile memory technologies.
• Relatively larger physical package size compared to newer memory devices.

Working Principles

The AT49F002NT-12JC utilizes flash EEPROM technology for data storage. It consists of a grid of memory cells that can be electrically programmed and erased. The device uses a combination of transistors and floating gate structures to store and retrieve digital information. When data is written or erased, electrical charges are applied to specific memory cells, altering their state and allowing for data storage or removal.

Detailed Application Field Plans

The AT49F002NT-12JC finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to the AT49F002NT-12JC include: - AT49BV002T-12TC - AM29F002BT-90EC - SST39SF020A-70-4C-NHE

These models provide comparable storage capacity, access time, and interface compatibility.

In conclusion, the AT49F002NT-12JC is a non-volatile memory device with a high storage capacity of 2 megabits. It offers fast access times, low power consumption, and reliable data storage. The device can be easily integrated into various electronic systems and finds applications in diverse fields. While it has some limitations in terms of erase/program cycle endurance and physical package size, there are alternative models available with similar features.