AT49F002N-90VC

Product Overview

Category

AT49F002N-90VC belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High capacity: The AT49F002N-90VC has a storage capacity of 2 megabits.
• Fast access time: It operates at a speed of 90 nanoseconds.
• Low power consumption: Designed to minimize power usage.
• Reliable: Offers high endurance and data retention capabilities.

Package

The AT49F002N-90VC is available in a standard 32-pin plastic DIP (Dual In-line Package).

Essence

This product is an essential component for data storage in various electronic devices, including microcontrollers, embedded systems, and consumer electronics.

Packaging/Quantity

The AT49F002N-90VC is typically packaged in reels or tubes, with quantities varying based on customer requirements.

Specifications

• Memory Type: Flash EEPROM
• Organization: 256K x 8 bits
• Supply Voltage: 5V ±10%
• Access Time: 90 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycle Endurance: 10,000 cycles
• Data Retention: 20 years

Detailed Pin Configuration

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VCC
13. OE#
14. CE#
15. WE#
16. I/O0
17. I/O1
18. I/O2
19. I/O3
20. I/O4
21. I/O5
22. I/O6
23. I/O7
24. RY/BY#
25. NC
26. GND
27. A15
28. A13
29. A11
30. A10
31. A9
32. A8

Functional Features

• Easy integration: Compatible with a wide range of microcontrollers and systems.
• High-speed operation: Offers fast read and write access times for efficient data transfer.
• Versatile interface: Supports both parallel and serial communication protocols.
• Flexible erase and programming options: Allows for sector or chip-level erasure and programming.
• Hardware and software protection mechanisms: Provides security features to prevent unauthorized access.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity suitable for various applications.
• Fast access time enables quick data retrieval.
• Low power consumption for energy-efficient operation.
• Reliable endurance and data retention characteristics.

Disadvantages

• Limited erase and program cycle endurance compared to some other memory technologies.
• Relatively higher cost per bit compared to certain alternatives.

Working Principles

The AT49F002N-90VC utilizes flash EEPROM technology, which combines the benefits of electrically erasable programmable read-only memory (EEPROM) and floating-gate transistors. It stores data by trapping electrical charges in the floating gate, allowing information to be retained even when power is removed. The device can be programmed and erased using specific voltage levels applied to the control pins.

Detailed Application Field Plans

The AT49F002N-90VC finds extensive use in various electronic systems, including: 1. Microcontrollers and microprocessors 2. Embedded systems and IoT devices 3. Automotive electronics 4. Communication equipment 5. Industrial control systems 6. Consumer electronics

Detailed and Complete Alternative Models

1. AT49F002N-55JI: Similar to the AT49F002N-90VC but with a faster access time of 55 ns.
2. AT49F002NT-12JC: Offers a lower supply voltage of 3.3V and an access time of 120 ns.
3. AT49F002AN-55VI: Provides a wider operating temperature range (-40°C to +125°C) and a faster access time of 55 ns.

These alternative models offer different specifications and features, allowing users to choose the most suitable option for their specific requirements.

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