AT49F002A-55VI

Product Overview

Category

AT49F002A-55VI belongs to the category of Flash Memory.

Use

It is commonly used for data storage and retrieval in various electronic devices.

Characteristics

• Non-volatile memory
• High-speed read and write operations
• Low power consumption
• Wide operating voltage range
• Durable and reliable

Package

AT49F002A-55VI is available in a standard 32-pin plastic package.

Essence

The essence of AT49F002A-55VI lies in its ability to store and retrieve digital information reliably and efficiently.

Packaging/Quantity

This product is typically packaged in reels or tubes, with a quantity of 1000 units per package.

Specifications

• Memory Size: 2 Megabits (256 K x 8)
• Operating Voltage: 2.7V - 5.5V
• Access Time: 55 ns
• Erase/Program Suspend: Yes
• Sector Architecture: Uniform 4 KByte
• Data Retention: 20 years
• Endurance: 10,000 erase/write cycles

Detailed Pin Configuration

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VCC
13. WE#
14. OE#
15. CE#
16. BYTE#
17. NC
18. I/O0
19. I/O1
20. I/O2
21. I/O3
22. I/O4
23. I/O5
24. I/O6
25. I/O7
26. GND
27. RP#
28. BYTE#
29. A8
30. A9
31. A11
32. A13

Functional Features

• High-speed read and write operations allow for quick data access.
• Low power consumption ensures efficient energy usage.
• Erase/Program Suspend feature enables interruption and resumption of erase or program operations.
• Wide operating voltage range provides compatibility with various electronic systems.

Advantages and Disadvantages

Advantages

• Non-volatile memory retains data even when power is disconnected.
• High endurance allows for frequent erase/write cycles.
• Compact package size facilitates integration into different devices.
• Reliable and durable, ensuring data integrity over time.

Disadvantages

• Limited storage capacity compared to other flash memory options.
• Relatively slower access times compared to some newer memory technologies.

Working Principles

AT49F002A-55VI utilizes a floating gate transistor structure to store digital information. The memory cells are organized in a uniform sector architecture, allowing for efficient erasing and programming operations. When data is written, charges are trapped in the floating gate, altering the cell's electrical characteristics. These charges can be erased by applying appropriate voltages, enabling subsequent reprogramming.

Detailed Application Field Plans

AT49F002A-55VI finds applications in various electronic devices, including but not limited to: - Microcontrollers - Embedded systems - Communication devices - Automotive electronics - Consumer electronics

Detailed and Complete Alternative Models

1. AT49F002N-55VI
2. AT49F002T-55VI
3. AT49F002NT-55VI
4. AT49F002BT-55VI
5. AT49F002AN-55VI

These alternative models offer similar specifications and functionality, providing flexibility in choosing the most suitable option for specific application requirements.

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