AT49F001N-90VC

Product Overview

Category

AT49F001N-90VC belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High capacity: Offers a storage capacity of 1 megabit (128 kilobytes).
• Fast access time: Provides a fast access time of 90 nanoseconds.
• Low power consumption: Operates on low power, making it suitable for battery-powered devices.

Package

AT49F001N-90VC is available in a standard 32-pin plastic dual in-line package (PDIP).

Essence

The essence of AT49F001N-90VC lies in its ability to provide reliable and non-volatile data storage in various electronic applications.

Packaging/Quantity

This product is typically packaged in reels or tubes, with a quantity of 25 pieces per tube.

Specifications

• Memory Type: Flash EEPROM
• Organization: 128K x 8 bits
• Supply Voltage: 4.5V - 5.5V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 10 years
• Endurance: 10,000 erase/write cycles

Pin Configuration

The detailed pin configuration of AT49F001N-90VC is as follows:

```

Pin Name Description

1 A0-A16 Address Inputs 2 CE# Chip Enable Input 3 OE# Output Enable Input 4 WE# Write Enable Input 5 RESET# Reset Input 6 BYTE# Byte/Word Organization Selection Input 7 VCC Power Supply 8 GND Ground 9-24 DQ0-DQ15 Data Input/Output 25 RP# Ready/Busy Output 26 VPP Programming Voltage 27 A17 Address Input 28 A18 Address Input 29 A19 Address Input 30 A20 Address Input 31 NC No Connect 32 NC No Connect ```

Functional Features

AT49F001N-90VC offers the following functional features:

• High-speed data transfer
• Easy integration into existing systems
• Flexible programming options
• Reliable data retention
• Compatibility with various microcontrollers and processors

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data integrity even during power loss.
• Fast access time allows for quick data retrieval.
• Low power consumption extends battery life in portable devices.
• High endurance enables frequent erase/write cycles.

Disadvantages

• Limited storage capacity compared to other memory devices.
• Higher cost per unit compared to traditional volatile memory.

Working Principles

AT49F001N-90VC utilizes flash EEPROM technology to store data. It consists of a grid of memory cells, each capable of holding one bit of information. The data is stored by trapping electric charges within the floating gate of each cell. These charges can be erased or programmed using specific voltage levels applied to the control inputs.

Detailed Application Field Plans

AT49F001N-90VC finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Alternative Models

Below are some alternative models that offer similar functionality to AT49F001N-90VC: - AT49BV001T - AM29F010B - W27C010 - M29F010B - SST39SF010A

These models can be considered as alternatives based on specific requirements and compatibility with the target system.

Word count: 511 words