AT49F001N-90TC

Product Overview

Category

AT49F001N-90TC belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The stored data is retained even when power is removed.
• High capacity: The AT49F001N-90TC has a storage capacity of 1 megabit (128 kilobytes).
• Fast access time: It operates with a maximum access time of 90 nanoseconds.
• Low power consumption: The device is designed to minimize power usage.
• Reliable: It offers high endurance and data retention capabilities.
• Easy integration: The AT49F001N-90TC can be easily integrated into various electronic systems.

Package

The AT49F001N-90TC is available in a standard 32-pin Thin Small Outline Package (TSOP).

Essence

The essence of this product lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

The AT49F001N-90TC is typically packaged in reels, with each reel containing a quantity of 250 units.

Specifications

• Storage Capacity: 1 megabit (128 kilobytes)
• Access Time: 90 nanoseconds
• Supply Voltage: 5V
• Operating Temperature Range: -40°C to +85°C
• Package Type: 32-pin TSOP

Detailed Pin Configuration

The AT49F001N-90TC has a total of 32 pins. The pin configuration is as follows:

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VPP
13. OE#
14. CE#
15. WE#
16. I/O0
17. I/O1
18. I/O2
19. I/O3
20. I/O4
21. I/O5
22. I/O6
23. I/O7
24. VCC
25. GND
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC

Functional Features

The AT49F001N-90TC offers the following functional features:

• Byte-wide access: It allows data to be read or written in individual bytes.
• Sector erase capability: The device supports sector erase operations, enabling efficient memory management.
• Chip erase function: The entire memory can be erased simultaneously using the chip erase function.
• Write protection: The device provides write protection mechanisms to prevent accidental modification of stored data.
• Automatic sleep mode: It enters a low-power sleep mode when not in use, reducing power consumption.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• High storage capacity for various applications.
• Fast access time enables quick data retrieval.
• Low power consumption prolongs battery life in portable devices.
• Reliable endurance and data retention characteristics.
• Easy integration into electronic systems.

Disadvantages

• Limited storage capacity compared to higher-capacity memory devices.
• Relatively slower access time compared to some other memory technologies.
• Higher cost per unit compared to certain lower-capacity memory options.

Working Principles

The AT49F001N-90TC is based on Flash memory technology. It utilizes floating-gate transistors to store and retrieve data. When data is written, charges are trapped in the floating gate, altering the transistor's behavior. These charges can be removed during erase operations, allowing the transistor to return to its original state. The stored data can be accessed by applying appropriate voltage levels to the device's pins.

Detailed Application Field Plans

The AT49F001N-90TC finds applications in various electronic systems, including but not limited to:

1. Embedded systems
2. Consumer electronics
3. Automotive electronics
4. Industrial control systems
5. Communication devices

Detailed and Complete Alternative Models

1. AT49F002N-55TC: 2 megabit (256 kilobytes) capacity, 55 nanoseconds access time.
2. AT49F004N-90TC: 4 megabit (512 kilobytes) capacity, 90 nanoseconds access time.
3. AT49F008N-70TC: 8 megabit (1 megabyte) capacity, 70 nanoseconds access time.
4. AT49F016N-45TC: 16 megabit (2 megabytes) capacity, 45 nanoseconds access time.

These alternative models offer different storage capacities and access times to cater to diverse application requirements